 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SI1913DH New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.490 @ VGS = -4.5 V -20 0.750 @ VGS = -2.5 V 1.10 @ VGS = -1.8 V ID (A) -1.0 - 0.81 - 0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) S1 1 6 D1 S1 S2 Marking Code YY DC XX G1 Lot Traceability and Date Code G2 G1 2 5 G2 D2 3 4 S2 Part # Code Top View D1 D2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS -0.61 0.74 0.38 -55 to 150 - 0.72 -3 -0.48 0.57 0.30 W _C -0.63 A Symbol VDS VGS 5 secs Steady State -20 "8 Unit V - 1.0 -0.88 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71965 S-21482--Rev. A, 26-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W C/W 1 SI1913DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "8 V VDS = -16 V, VGS = 0 V VDS = -16 V, VGS = 0 V, TJ = 85_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -0.88 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -0.71 A VGS = -1.8 V, ID = -0.2 A Forward Transconductancea gfs VSD VDS = -10 V, ID = -0.88 A IS = -0.47 A, VGS = 0 V -2 0.400 0.610 0.850 1.5 -0.85 -1.2 0.490 0.750 1.10 S V W -0.45 1 "100 -1 -5 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.47 A, di/dt = 100 A/ms VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -0.88 A 1.2 0.3 0.21 18 25 15 12 30 30 40 45 20 60 ns 1.8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71965 S-21482--Rev. A, 26-Aug-02 SI1913DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.0 VGS = 5 thru 3 .5V 2.5 3V 2.5 TC = -55_C 25_C 2.0 3.0 Vishay Siliconix Transfer Characteristics I D - Drain Current (A) 2.0 1.5 2V 1.0 1.5 V 1V 0.0 0 1 2 3 4 I D - Drain Current (A) 2.5 V 1.5 125_C 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.6 VGS = 1.8 V C - Capacitance (pF) 1.2 120 160 Capacitance r DS(on) - On-Resistance ( W ) Ciss VGS = 2.5 V 0.8 80 VGS = 4.5 V 0.4 40 Coss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 Crss 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.9 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 VGS = 4.5 V ID = 0.88 A 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 0.9 1.2 1.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71965 S-21482--Rev. A, 26-Aug-02 www.vishay.com 3 SI1913DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 1.6 On-Resistance vs. Gate-to-Source Voltage 1 I S - Source Current (A) r DS(on) - On-Resistance ( W ) TJ = 150_C 1.2 ID = 0.88 A 0.8 TJ = 25_C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 -0.00 -0.05 -0.10 -0.15 -50 0 0.01 1 Power (W) 3 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 4 2 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 rDS(on) Limited I D - Drain Current (A) 1 P(t) = 0.001 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 71965 S-21482--Rev. A, 26-Aug-02 SI1913DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 Notes: 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71965 S-21482--Rev. A, 26-Aug-02 www.vishay.com 5 |
Price & Availability of SI1913DH
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |