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SGF15N60RUFD
IGBT
SGF15N60RUFD
Short Circuit Rated IGBT
General Description
Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
Features
* * * * * Short circuit rated 10us @ TC = 100C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 15A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3PF TO-3PF
GCE
E
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg TL
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
SGF15N60RUFD 600 20 24 15 45 15 160 10 100 40 -55 to +150 -55 to +150 300
Units V V A A A A A us W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 1.2 2.6 40 Units C/W C/W C/W
(c)2003 Fairchild Semiconductor Corporation
SGF15N60RUFD Rev. A
SGF15N60RUFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --6.0 2.2 2.5 8.5 2.8 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---948 101 33 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----17 33 44 118 320 356 676 20 34 48 212 340 695 1035 -42 7 17 14 --65 200 --950 --70 350 --1450 -60 10 24 -ns ns nS ns uJ uJ uJ ns ns ns ns uJ uJ uJ us nC nC nC nH
VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 15A, RG = 13, VGE = 15V, Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 15A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 15A TC = 100C TC = 25C TC = 100C IF= 15A, di/dt = 200 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 50 74 4.5 6.5 80 220
Max. 1.7 -95 -6.0 -180 --
Units V ns A nC
(c)2003 Fairchild Semiconductor Corporation
SGF15N60RUFD Rev. A
SGF15N60RUFD
50 45 40 Common Emitter T C = 25
20V
45 15V 12V 40 Common Emitter VGE = 15V TC = 25 TC = 125 ------
Collector Current, IC [A]
8
35 30 25 20 15 10 5 0
Collector Current, IC [A]
35 30 25 20 15 10 5 0 0 2 4 6 VGE = 10V
1
10
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
4.0
Collector - Emitter Voltage, VCE [V]
Common Emitter V GE = 15V 3.5 30A
24
Vcc = 300V load Current : peak of square wave
20
3.0
16
2.5 15A 2.0 IC = 8A 1.5
Load Current [A]
12
8
4
1.0 -50 0 50 100 150
0 0.1
Duty cycle : 50% Tc = 100 Power Dissipation = 20W
1 10 100 1000
Case Temperature, T C []
Frequency [kHz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25
20 Common Emitter T C = 125 16
Collector - Emitter Voltage, V CE [V]
16
12
Collector - Emitter Voltage, V CE [V]
12
8
8 30A 4 IC = 7A 0 15A
30A 4 IC = 7A 0 0 4 8 12 16 20 15A
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
SGF15N60RUFD Rev. A
SGF15N60RUFD
1800
1500
Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies
Capacitance [pF]
Common Emitter V CC = 300V, V GE = 15V IC = 15A T C = 25 T C = 125 ------
Ton
1200
Switching Time [ns]
100
Tr
900 Coes
600
Cres 300
0 1 10
10 1 10 100
Collector - Emitter Voltage, VCE [V]
Gate Resistance, R G []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------
Common Emitter V CC = 300V, VGE = 15V IC = 15A T C = 25 T C = 125 ------
Switching Loss [uJ]
Toff
1000 Eoff Eon Eoff
Toff Tf
Tf 100 100 1 10 100 1 10 100
Gate Resistance, R G [ ]
Gate Resistance, RG [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
1000 Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 -----Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------
Switching Time [ns]
Ton
100
Switching Time [ns]
Tr
Toff Tf Toff 100 Tf
10 5 10 15 20 25 30 5 10 15 20 25 30
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
SGF15N60RUFD Rev. A
SGF15N60RUFD
15
Common Emitter V GE = 15V, RG = 13 T C = 25 T C = 125 ------
Gate - Emitter Voltage, VGE [ V ]
12
Common Emitter R L = 20 T C = 25 VCC = 100 V 300 V
Switching Loss [uJ]
Eoff 1000 Eoff
9
200 V
6
Eon
3
100 5 10 15 20 25 30
0 0 10 20 30 40 50
Collector Current, IC [A]
Gate Charge, Q g [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
100 IC MAX. (Pulsed) 50us IC MAX. (Continuous) 100us 1 DC Operation
100
Collector Current, IC [A]
10
Collector Current, IC [A]
10
1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000
0.1
Safe Operating Area VGE = 20V, TC = 100 1 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1
Thermal Response [Zthjc]
0.5
0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-5 1E-4 1E-3 0.01 0.1
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2003 Fairchild Semiconductor Corporation SGF15N60RUFD Rev. A
SGF15N60RUFD
100
T C = 25 T C = 100 ------
100 VR = 200V IF = 15A TC = 25 TC = 100 ------
Reverse Recovery Current, Irr [A]
0 1 2 3
Forward Current, IF [A]
10
10
1
1 100
1000
Forward Voltage Drop, V FM [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
800 V R = 200V IF = 15A T C = 25 T C = 100 ------
120 V R = 200V IF = 15A T C = 25 T C = 100 ------
Stored Recovery Charge, Q [nC] rr
Reverce Recovery Time, t rr [ns]
100
600
80
400
60
200
40
0 100 1000
20 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2003 Fairchild Semiconductor Corporation
SGF15N60RUFD Rev. A
SGF15N60RUFD
Package Dimension
TO-3PF
5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50)
10.00 0.20
10
26.50 0.20
23.00 0.20
16.50 0.20
14.50 0.20
0.85 0.03 16.50 0.20 2.00 0.20 1.50 0.20
14.80 0.20
2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10
+0.20
2.00 0.20
2.50 0.20
2.00 0.20
3.30 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.90 -0.10
+0.20
3.30 0.20
2.00 0.20
5.50 0.20
Dimensions in Millimeters
(c)2003 Fairchild Semiconductor Corporation SGF15N60RUFD Rev. A
22.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I3

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