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| SFF7002KA2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER'S DATA SHEET Part Number / Ordering Information 1/ SFF7002KA2 __ __ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV Level S = S Level Package 3/ GW = GULLWING Dual Microminiature Package 300 mA 60 Volts 2 Dual N-Channel Logic Level TrenchFET MOSFET * * * * * Features: Low On-resistance, < 2 ohm Low Input Capacitance, < 25 pF Low threshold voltage, < 2 V Fast switching, < 25 ns TX, TXV, and S-Level Screening Available. Consult Factory Maximum Ratings Gate - Source Voltage Drain to Source Voltage Continuous Drain Current Instantaneous (pulsed) Drain Current, Tj limited Power Dissipation @ TA= 25oC Maximum Thermal Resistance, Junction to PCB Operating & Storage Temperature PACKAGE OUTLINE: GULLWING (GW) 2x .050 (=.100) 6x .030 .015 6x .010 Symbol VGS VDS TA= 25 C TA= 100oC Per Device Total o Value 20 60 300 190 800 350 500 250 -65 to +200 Units Volts Volts mA mA mW mW C/W C ID IDM PD RJ-PCB 5/ TOP & TSTG 3x .015 PIN 6 PIN 4 PIN 4 .015.010 .107 .125 .193 5x R.018 PIN 6 .034 PIN 1 PIN 3 .025 PIN 3 PIN 1 .040 .010 .107 .130 .010 .035 6x R.010 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0024A SSDI .350 .010 .033 DOC Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF7002KA2GW Symbol Min IG = 10 A, VDS = 0 V VDS = VGS , ID = 0.25 mA VGS = +/-20 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V VGS = +/-5 V, VDS = 0 V VGS = +/-10 V, VDS = 0 V, TA = 85C VDS = 50 V, VGS = 0 V VDS = 60 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TA = 85C VDS = 60 V, VGS = 0 V,TA = 125C VDS = 7.5 V, VGS = 10 V VDS = 4.5 V, VGS = 10 V VDS = 25 V, VGS = 10 V ID = 500 mA, VGS = 10 V ID = 200 mA, VGS = 10 V ID = 50 mA, VGS = 5 V ID = 200 mA, VDS = 10 V IS = 200 mA, VGS = 0 V VDS = 10 V, VGS = 4.5 V, ID= 250 mA VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 V, f = 1 MHz VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 30 V, ID = 200 mA, RL = 150 , RG = 10 , VG= 10 V BVDSS VGS(th) IGSS 60 1.0 Electrical Characteristics 4/ Gate - Source Breakdown Voltage Gate to Source Threshold Voltage Gate to Source Leakage Current Typ 70 2.0 0.0005 Max -- 2.5 10 150 100 1000 10 1 100 500 Units Volts Volts uA nA nA nA nA uA nA uA mA mA A Zero Gate Voltage Drain Current On-state Drain Current IDSS 800 500 - 0.4 ID(ON) 2.1 2.8 4.0 3.5 3.5 1.3 Drain - Source On-Resistance Transconductance Body Diode Forward Voltage Total Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on time Turn-off time NOTES: * Pulse Test: Pulse Width = 100 sec, Duty Cycle = 2% RDS(ON) GFS VSD Qg Ciss Coss Crss tON tOFF -- -- -- -- -- 100 mS V nC pF pF pF ns ns 0.6 30 6 2.5 10 13 25 35 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25C 5/ Mounted on FR1 PCB 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 Available Part Numbers: SFF7002KA2GW Package Gullwing Pin 1 Drain PIN ASSIGNMENT Pin 2 Pin 3 Pin 4 Gate Source Drain Pin 5 Gate Pin 6 Source NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0024A DOC |
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