View SFF11N80_1307429.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF11N80 Series
DESIGNER'S DATA SHEET
Part Number / Ordering Information 1/ SFF11N80 __ __ __
Screening 2/ __ = Not Screen TX = TX Level TXV = TXV Level S = S Level Lead Option 3/ __ = Straight Leads
11 AMP / 800 Volts 0.95 N-Channel MOSFET
Features:
* * * * * * * * * * * Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed, Isolated Package Ceramic Seal Package Available. Contact Factory TX, TXV, S-Level screening available Replacement for IXTH11N80 Types
DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z
Maximum Ratings Drain - Source Voltage Gate - Source Voltage Continues Collector Current Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) TC = 25C TC = 55C
Symbol
Value
Units
VDS VGS ID PD Top & Tstg RJC
800 20 11 150 114 -55 to +175 0.83
Volts Volts Amps W C C/W
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00213C
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com
SFF11N80 Series
Electrical Characteristics 4/ Drain to Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain to Source On State Resistance (VGS = 10V, ID = 5.5A) On State Drain Current (VDS > ID(on) x RDS(on) Max, VGS = 10V) Gate Threshold Voltage (VDS = VGS, ID = 250A) Gate to Source Leakage (VGS = 20V) Zero Gate Voltage Drain Current (VGS = 0V) Forward Transconductance * (VDS > ID(on) x RDS(on) Max, ID = 5.5A) Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage * (IF = 11A, VGS = 0V) Diode Reverse Recovery Time (IF = 11A, di/dt = 100A/sec) Input Capacitance Output Capacitance Reverse Transfer Capacitance
NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25C.
Symbol BVDSS RDS(on) ID(on) VGS(th) IGSS VDS = 800V, TA = 25C VDS = 640V, TA = 125C IDSS gfs VGS = 10V VDS = 640V ID = 5.5A VDS = 400V ID = 5.5A RG = 2.0 Qg Qgs Qgd td(on) tr td(off) tf VSD trr VGS = 0V VDS = 25V f = 1MHz Ciss Coss Crss
Min 800 -- 11 2.0 -- -- -- 8.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ -- -- -- -- -- -- -- 14 128 30 55 20 33 63 32 -- -- 4200 360 100
Max -- 0.95 -- 4.5 100 250 1.0 -- 145 55 80 50 50 100 50 1.5 550 -- -- --
Units Volts A V nA A mA Mho nC
nsec
V nsec pF
Available Part Numbers:
SFF11N80M; SFF11N80MDB; SFF11N80MUB; SFF11N80Z; SFF11N80ZDB; SFF11N80ZUB;
PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 Source Pin 2 Pin 2 Gate Pin 3 Pin 3
SOLID STATE DEVICES INC. 14830 Valley View, La Mirada, Ca 90631
DATA SHEET APPROVAL FORM
Data Sheet Number F00213 Part Number(s): SFF11N80M SFF11N80Z Approval Engineering Manager: Executive / CEO Operation Manager: Marketing Manager: Quality Manager: Revisions
ECO No E-030492 REV C DATE 08/12/03 DESCRIPTION Changed Trr 250ns to 550ns APPROVAL
Rev C
Check Box to Include on Web:
Sign
Date
FORM# Q312 Rev. B

▲Up To Search▲

Price & Availability of SFF11N80

	To Download SFF11N80 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .