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| ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT904-20G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 904 nm typ., singlemode Max. optical power: 20 mW Package: 9 mm PIN CONNECTION: 1) Laser diode cathode 2) Laser diode anode and photodiode cathode 3) Photodiode anode NOTE! LASERDIODE MUST BE COOLED! Absolute Maximum Ratings (Tc=25C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 25 2 30 -60 .. +60 -70 .. +85 UNIT mW V V C C Optical-Electrical Characteristics (Tc = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Threshold Current Ith cw Operation Current Iop Po = 20 mW Operation Voltage Uop Po = 20 mW Lasing Wavelength Po = 20 mW p Beam Divergence Po = 20 mW // Beam Divergence Po = 20 mW Monitor Current Im Po = 20 mW MIN TYP MAX 120 140 160 175 190 2.2 890 904 910 7 10 13 15 30 35 0.6 1 1.2 UNIT mA mA V nm mA |
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