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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
OUTLINE DRAWING
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
4
FEATURES
High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
note(3)
APPLICATION
For output stage of high power amplifiers in VHF band mobile radio sets.
1
23
PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area
RoHS COMPLIANT
RD06HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter "G" after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD06HVF1
MITSUBISHI ELECTRIC 1/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25C 27.8 W Zg=Zl=50 0.6 W 3 A C 150 -40 to +150 C C/W junction to case 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.3W, f=175MHz, Idq=0.3A VDD=15.2V,Po=6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50 Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6 10 60 65 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD06HVF1
MITSUBISHI ELECTRIC 2/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
Silicon MOSFET Power Transistor 175MHz,6W
50 CHANNEL DISSIPATION Pch(W) 40
20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
30
0
2
4 6 Vgs(V)
8
10
Vds-Ids CHARACTERISTICS 4
Ta=+25C Vgs=10V
Vds VS. Ciss CHARACTERISTICS 60 50 40 Ciss(pF)
Ta=+25C f=1MHz
3 Ids(A)
Vgs=9V
Vgs=8V
2
Vgs=7V
30 20 10 0 0 10 Vds(V) 20 30
1
Vgs=6V Vgs=5V
0 0 2 4 6 Vds(V) 8 10
Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30
Ta=+25C f=1MHz
RD06HVF1
MITSUBISHI ELECTRIC 3/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
Pin-Po CHARACTERISTICS
RoHS Compliance, TYPICAL CHARACTERISTICS
Silicon MOSFET Power Transistor 175MHz,6W
Pin-Po CHARACTERISTICS 50 40 30 20
Gp Ta=+25C f=175MHz Vdd=12.5V Idq=0.3A
100
Po
14
Po
100 90 80 d(%) 70
d Ta=25C f=175MHz Vdd=12.5V Idq=0.3A Idd
12 80 60 40 20 0 Pout(W) , Idd(A) 10 8 6 4 2 0 0.0 0.1 0.2 0.3 Pin(W) 0.4 0.5
Po(dBm) , Gp(dB) , Idd(A)
d(%)
60 50 40 30 0.6
10 0 0 5 10 15 20 Pin(dBm) 25 30
Vdd-Po CHARACTERISTICS 16 14 12 10 Po(W) 8 6 4 2 0 4 6 8 10 Vdd(V) 12 14 0 0 0
Idd Ta=25C f=175MHz Pin=0.3W Idq=0.3A Zg=ZI=50 ohm
Vgs-Ids CHARACTORISTICS 2 4 5 4 Vds=10V Tc=-25~+75C -25C Ids(A),GM(S) 3 2 1 Idd(A) +75C +25C
Po
3
2
1
2
4 6 Vgs(V)
8
10
Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75C 1.5
gm(S)
1.0
-25C +25C
0.5
+75C
0.0 0 1 2 3 45 Vgs(V) 6 7 8 9
RD06HVF1
MITSUBISHI ELECTRIC 4/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
Vdd
RoHS Compliance, TEST CIRCUIT(f=175MHz)
Silicon MOSFET Power Transistor 175MHz,6W
Vgg
C1
9.1kOHM L6
8.2kOHM
C3 100OHM
300pF L1 RF-IN 300pF L2 L3 L4
C2 175MHz RD06HVF1 L5
RF-OUT 82pF
10pF 7 25 30 33 52 55 72 75 92 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1-L3:6Turns,I.D1.6mm,D0.4mm enameled copper wire L4:1Turns,I.D6mm,D1.6mm silver plateted copper wire L5:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L6:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire 5 70 87 92
5pF
30pF
100
Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm
RD06HVF1
MITSUBISHI ELECTRIC 5/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=175MHz Zout*
Zo=50ohm
f=175MHz Zin*
Zin , Zout f (MHz)
175
Zin (ohm)
4.25-j25.6
Zout (ohm)
5.64-j1.05
Conditions Po=10W, Vdd=12.5V,Pin=0.3W
RD06HVF1
MITSUBISHI ELECTRIC 6/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0
RD06HVF1
MITSUBISHI ELECTRIC 7/8
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD06HVF1
RoHS Compliance,
Silicon MOSFET Power Transistor 175MHz,6W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury.
RD06HVF1
MITSUBISHI ELECTRIC 8/8
10 Jan 2006

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