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RB558W
Diodes
Schottky barrier diode
RB558W
Applications Low current rectification External dimensions (Unit : mm)
1.6 0.2 0.30.1 0.05 (3) 0.15 0.05
Land size figure (Unit : mm)
0.5 0.5 0.7
Features 1) Ultra Small power mold type. (EMD3) 2) Low VF 3) High reliability.
1.60.1
0.80.1
0.20.1 -0.05
(2) 0.5 0.5 1.0 0.1
(1) 0.55 0.1 0.7 0.1
0.40.1 0.1Min.
0.7
0 0.1
0.7
0.6
EMD3
0.6
0.70.1
0.15
Construction Silicon epitaxial planar
ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory)
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.1 0 1.750.1 0.30.1
00.1
Structure
3.50.05
8.00.2
1.80.1
1.80.1
4.00.1
2.00.05
1.10.1 0.90.2
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz1cyc) (*1) Junction temperature Storage temperature (*1)Per chip
Electrical characteristics (Ta=25C) Parameter Sym bol
Symbol VR Io IFSM Tj Tstg
Limits 30 100 500 125 -40 to +125
5.50.2
Unit V mA mA
Min. -
Typ. -
Max. 0.35 0.49 10
Unit V V A
Conditions IF=10mA IF=100mA VR=10V
Forward voltage Reverse current
VF1 VF2 IR
2.40.1
1.3
1/3
RB558W
Diodes
Electrical characteristic curves (Ta=25C)
1000 100
FORWARD CURRENT:IF(mA)
10000 Ta=125
REVERSE CURRENT:IR(uA)
100 Ta=125 f=1MH
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 Ta=75 100 10 1 Ta=-25 0.1 0.01 Ta=25
10 1 0.1 0.01 0.001 0
Ta=75
Ta=-25
10
Ta=25
1 0 10 20 30 0 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20
100
200
300
400
500
600
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
300 Ta=25 IF=10mA n=30pcs
30 25
REVERSE CURRENT:IR(uA)
20 Ta=25 VR=10V n=30pcs 19 18
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD VOLTAGE:VF(mV)
290
20 15 10 5 0 AVE:2.017uA
17 16 15 14 13 12 11 10 AVE:17.34pF
Ta=25 f=1MHz VR=0V n=10pcs
280
270
260 AVE:270.2mV 250
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20 Ifsm
PEAK SURGE FORWARD CURRENT:IFSM(A)
10 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
10 Ifsm 8.3ms 8.3ms
15 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm t
1cyc 5
10 AVE:3.90A 5
5
0
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
0.1 Rth(j-a) 0.08 Per chip
0.1 Per chip 0.08
REVERSE POWER DISSIPATION:P R (W)
100
Rth(j-c) Mounted on epoxy board
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 0.06 Sin(180) 0.04 DC
0.06
10
IM=1mA
IF=10mA
0.04
D=1/2 DC Sin(180)
1ms
time
0.02
0.02
300us
1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000
0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2
0 0 10 20 30
REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS
2/3
RB558W
Diodes
0.3 Per chip
AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V t Io VR D=t/T VR=15V Tj=125
0.3 Per chip 0.2
DC 0A 0V t T D=1/2 Io VR D=t/T VR=15V Tj=125
0.2
DC D=1/2
T
0.1
Sin(180)
0.1
Sin(180)
0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating curve (Io-Ta) 125
0 0 25 50 75 100 125
CASE TEMPARATURE:Tc() Derating curve (Io-Tc)
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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