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| RB531XN Diodes Schottky barrier diode RB531XN !Applications Rectifying small power !External dimensions (Unit : mm) 2.00.2 1.30.1 0.65 0.65 0.90.1 0.7 0.1Min. 1.250.1 2.10.1 (4) (5) !Construction Silicon epitaxial planar ROHM : UMD6 EIAJ : SOT-363 JEDEC : !Absolute maximum ratings (Ta=25C) Parameter DC reverse voltage Mean rectifying current 1 Peak forward surge curren 2 Junction temperature Storage temperature 1 Rating of per diode. 2 60Hz for 1 Symbol VR IO IFSM Tj Tstg Limits 30 100 1 125 -40 to +125 Unit V mA A C C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - - - Typ. - - - Max. 0.300 0.430 20 Unit V V A IF=10mA IF=100mA VR=10V Note) Please pay attention to static electricity when handling. 3K (6) !Features 1) Small mold type. (UMD6) 2) High reliability. KKK (3) (2) (1) (3) (2) (1) 00.1 (4) (5) (6) AAA 0.2 +0.1 -0.05 0.150.05 Conditions 1/2 RB531XN Diodes !Electrical characteristic curves (Ta=25C) 1 10m 1m REVERSE CURRENT : IR (A) 100 FORWARD CURRENT : IF (A) 100m 10m 1m 100 10 1 0 125C 75C 12 5 75 C C 25 C 100 TERMINAL CAPACITANCE : CT (pF) 10 1 100n 10 -2 5C 25C -25C 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 2/2 |
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