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RB450F
Diodes
Schottky barrier diode
RB450F
Applications Low current rectificaton External dimensions (Unit : mm) Land size figure (Unit : mm)
1.3
2.00.2 0.30.1
1.250.1
2.10.1
Features 1) Small mold type. (UMD3) 2) Low IR 3) High reliability.
(2) 0.65
(3)
0.9MIN.
0.65
0.8MIN.
00.1 0.1Min
(1) 0.65 0.70.1 0.90.1
UMD3
1.30.1
Structure
Construction Silicon epitaxial planar
ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory)
Taping specifications(Unit : mm)
4.00.1 2.00.05 1.550.05 0.30.1 1.750.1
3.50.05
8.00.2
2.40.1
5.50.2
2.250.1 0
4.00.1
0.50.05
00.1
2.40.1
1.250.1
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 100 1 125 -40 to +125 Unit V V mA A
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminal Symbol VF IR Ct Min. Typ. 6.0 Max. 0.45 1 Unit V A pF Conditions IF=10mA VR=10V VR=10V , f=1MHz
1.6
Each lead has same dimension
0.150.05
Rev.B
1/3
RB450F
Diodes
Electrical characteristic curves (Ta=25C)
100 Ta=125
FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA)
100 10 1
Ta=125
100 f=1MHz
10
Ta=75 Ta=25 Ta=-25
Ta=75
1
Ta=25 0.1 Ta=-25 0.01 0.001
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10
0.1
0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 10 20 30 0 10 20 30
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
400
FORWARD VOLTAGE:VF(mV)
1000
REVERSE CURRENT:IR(nA)
20 Ta=25 VR=10V n=30pcs 18
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
390 380 370 360 AVE:370.2mV 350
Ta=25 IF=10mA n=30pcs
900 800 700 600 500 400 300 200 100 0 AVE:88.62nA
16 14 12 10 8 6 4 2 0 AVE:5.81pF
Ta=25 f=1MHz VR=10V n=10pcs
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A)
15
PEAK SURGE FORWARD CURRENT:IFSM(A)
15 Ifsm Ifsm t 10
Ifsm 15
1cyc 8.3ms
10
8.3ms 8.3ms 1cyc
10
5
5
5 AVE:5.5A 0
0 0.1 IFSM DISRESION MAP 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
0.1 Rth(j-a)
REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W)
0.003
Rth(j-c) 100
Mounted on epoxy board IF=100mA
0.08 D=1/2 0.06 Sin(180) 0.04 0.02 0
DC 0.002 DC 0.001 Sin(180) D=1/2
10
1ms time 300us
1 0.001
0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30
0.1
10
1000
TIME:t(s) Rth-t CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB450F
Diodes
0.3 0.3
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
t T
0.2 0.15 0.1 0.05 0 0
DC D=1/2
VR D=t/T VR=15V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.25
0A 0V
Io 0.25 0.2 0.15 0.1 0.05 0 Sin( ) 0 25 DC D=1/2
0A 0V
Io t T VR D=t/T VR=15V Tj=125
Sin(180)
25
50
75
100
125
50
75
100
125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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