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RB205T-40
Diodes
Schottky barrier diode
RB205T-40
Applications Switching power supply External dimensions (Unit : mm) Structure
4.50.3 0.1
8.00.2 12.00.2
15.00.4 0.2
1.3 0.8 (1) (2) (3)
13.5MIN
Construction Silicon epitaxial planar
1.2
5.00.2
0.70.1 0.05
8.0
Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability
10.00.3 0.1
2.80.2 0.1
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current*1 Forward current surge peak 60Hz1cyc*1 Junction temperature Storage temperature (*1)Tc=100max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 15 100 150 -40 to +150 Unit V V A A
Electrical characteristic (Ta=25C)
Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.55 300 2.0 Unit V A /W Conditions IF=7.5A VR=40V junction to case
Rev.B
1/3
RB205T-40
Diodes
Electrical characteristic curves
10
Ta=150
1000000 100000
REVERSE CURRENT:IR(uA)
Ta=150 Ta=125
10000
f=1MHz
FORWARD CURRENT:IF(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=125
1
10000
Ta=75
1000
Ta=75 Ta=25
1000 100 10 1 0.1
Ta=-25 Ta=25
100
0.1
Ta=-25
10
0.01 0 100 200 300 400 500 600 700
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 30 35 40 0 10 20 30
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
520
FORWARD VOLTAGE:VF(mV)
200
REVERSE CURRENT:IR(uA)
Ta=25 IF=7.5A n=30pcs Ta=25 VR=40V n=30pcs
1650 1640
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
510 500 490 480
AVE:492.2mV
150
1630 1620 1610 1600 1590 1580 1570 1560 1550 AVE:1619.8pF
Ta=25 f=1MHz VR=0V n=10pcs
100
50
AVE:35.9uA
470
VF DISPERSION MAP
0
IR DISPERSION MAP
Ct DISPERSION MAP
300
PEAK SURGE FORWARD CURRENT:IFSM(A)
30
Ifsm 1cyc 8.3ms
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
RESERVE RECOVERY TIME:trr(ns)
250 200 150 100 50 0
25 20 15 10 5 0
trr DISPERSION MAP
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
AVE:176.0A
AVE:20.6ns
10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
IFSM DISRESION MAP
1000
100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Ifsm 1cyc 8.3ms
IM=100mA IF=10A
20
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
300us
Rth(j-a)
FORWARD POWER DISSIPATION:Pf(W)
1ms
time
15
D=1/2
100
10
Sin(180)
DC
1
Rth(j-c)
5
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 0.1 10 1000
TIME:t(s) Rth-t CHARACTERISTICS
0
5
10 15 20 25 AVERAGE RECTIFIED FORWARD CURRENTIo(A) cIo-Pf CHARACTERISTICS
30
Rev.B
2/3
RB205T-40
Diodes
20 18 40 35 0A 0V DC D=1/2 t T 40 35 0A 0V D=1/2 DC t T
Io
Io VR D=t/T VR=20V Tj=150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
REVERSE POWER DISSIPATION:PR (W)
14 12 10 8 6 4 2 0 0 10 20 Sin(180) 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS D=1/2 DC
30 25 20 15 10
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
16
VR D=t/T VR=20V Tj=150
30 25 20 15 10 5 0
Sin(180) 5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150
Sin(180)
0
25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
150
30 No break at 30kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
25 20 AVE:21.6kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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