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PHOTOMULTIPLIER TUBES
R5900U
FEATURES
GHigh Speed Response GWide Dynamic Range GCompact
GENERAL
Parameter Spectral Response Peak Wavelength Photocathode Window Material Dynode Structure Number of Stages Material Minimum Effective Area Description/Value 300 to 650 420 Bialkali 18 x 18 Borosilicate glass Metal channel dynode 10 Approx. 25.5 E678-32B (sold separately) -30 to +50 -30 to +50 Unit nm nm -- mm -- -- -- g -- C C
Weight Suitable Socket Operating Ambient Temperature Storage Temperature
MAXIMUM RATINGS (Absolute Maximum Values)
Supply Voltage Average Anode Current Parameter Between Anode and Cathode Value 900 0.1 Unit V mA
CHARACTERISTICS (at 25 C)
Cathode Sensitivity Parameter Luminous (2856 K) Blue Sensitivity Index (CS 5-58) Luminous (2856 K) Min. 60 7 30 5.0 x 105 -- -- -- -- Typ. 70 8 140 2.0 x 106 2 1.5 0.26 30 Max. -- -- -- -- 20 -- -- -- Unit A/lm -- A/lm -- nA ns ns mA
Anode Sensitivity Gain Anode Dark Current (after 30 min storage in darkness) Anode Pulse Rise Time Time Response Transit Time Spread (FWHM) Pulse Linearity 2 % deviation
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P Ratio 1.5 1.5 1.5 1 1 1 1 1 1 1 1 Supply Voltage: 800 Vdc, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may var y. Please consult with our sales office. Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 2003 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBE R5900U
Figure 1: Typical Spectral Response
TPMHB0266EA
Figure 2: Typical Gain and Anode Dark Current
108
TPMHB0265ED
100 CATHODE RADIANT SENSITIVITY 10
10-4 GAIN
CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
107
10-5
QUANTUM EFFICIENCY
105
10-7
1
104
10-8
103
10-9
0.1
102
10-10
101
ANODE DARK CURRENT
10-11
0.01 100
200
300
400
500
600
700
800
900
100 400
600
800
10-12 1000
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 3: Typical Time Response
TPMHB0263ED
Figure 4: Typical T.T.S. Characteristic
TPMHB0264EB
104
SUPPLY VOLTAGE=-800 V FWHM=256 ps FWTM=527 ps
RELATIVE COUNTS
103
(20 mV/div.)
102
101
SUPPLY VOLTAGE=-800 V RISE TIME=1532 ps FALL TIME=2691 ps WIDTH=3163 ps RL=50
100
TIME (2 ns/div.)
TIME (0.5 ns/div.)
ANODE DARK CURRENT (A)
106
10-6
GAIN
Figure 5: Effect of Magnetic Fields on Anode Output
110
TPMHB0261ED
Ebb=-800 V Z
100
Y-AXIS
+ - -
Y
+ +
RELATIVE OUTPUT (%)
X 80
-
60
Guide Corner (at Rear Side) X-AXIS
40
20 Z-AXIS 0 -80 -60 -40 -20 0 20 40 60 80
MAGNETIC FLUX DENSITY (mT)
Figure 6: Dimensional Outline and Basing Diagram (Unit: mm)
K IC (Dy10) IC Dy1 Dy2 Dy3 Dy4 IC (Dy10) CUT (K) 22.0 0.5 0.6 0.4 4.4 0.7 2.54 PITCH IC IC P IC IC IC IC 12.0 0.5
123456789 32 10 11 31 30 12 GUIDE 29 13 CORNER 28 14 15 27 16 26 25 24 23 22 21 20 19 18 17
30.0 0.5 25.7 0.5 18 MIN.
IC IC IC IC IC IC IC
4 MAX. PHOTOCATHODE EFFECTIVE AREA INSULATION COVER Side View Bottom View 29- 0.45 CUT (K) Dy10 Dy9 Dy8 Dy7 Dy6 Dy5 IC (Dy10) CUT (K) K : Photocathode Dy : Dynode P : Anode CUT : Short Pin IC : Internal Connection (Don't Use) Basing Diagram
Top View
TPMHA0278EI
PHOTOMULTIPLIER TUBE R5900U
[ACCESSORIES] (Unit: mm) G Scoket E678-32B
22.86 20.32 2.54 4.45 2.92
SOLD SEPARATELY
22.86
20.32
12.7
0.51
12.7
1.57
MATERIAL: Glass Epoxy
TACCA0094ED
G D Type Scoket Assembly E5996
30.0 0.5
SOLD SEPARATELY
PMT SOCKET PIN No.
30
SIGNAL GND
SIGNAL OUTPUT RG-174/U (BLACK)
PIN No.1
30.0 0.5 P
R14 DY10 DY9
24
R11 R10 R9 R8
C3 C2 C1
R13
23
15.0 0.5
HOUSING (INSULATOR)
R12 DY8 DY7 DY6 DY5
22
21
R7
20
R6
19
R1 to R3 : 330 k R4 to R11 : 220 k R12 to R14 : 51 R15 : 1 M C1 to C3 : 10 nF
450
R5 DY4 DY3 DY2 K DY1
7
R4
6
R3
5
R2
4
R15
1
R1
-HV
: RG-174U (RED)
POWER SUPPLY GND
TACCA0234EC
WARNING ~ High Voltage ~
The product is operated at high voltage potential. Further, the metal housing of the product is connected to the photocathode (potential) so that it becomes a high voltage potential when the product is operated at a negative high voltage (anode grounded). Accordingly, extreme safety care must be taken for the electrical shock hazard to the operator or the damage to the other instruments.
* PATENT: USA Pat. No. 5410211
PATENT PENDING: JAPAN 11, USA 1, EUROPE 2
WEB SITE http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMH1109E10
MAR. 2003 IP Printed in Japan (500)

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