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QEC112, QEC113 Plastic Infrared Light Emitting Diode
September 2005
QEC112, QEC113 Plastic Infrared Light Emitting Diode
Features
= 940 nm PACKAGE DIMENSIONS Chip material = GaAs Package type: T-1 (3 mm) Can be used with QSCXXX Photosensor Narrow Emission Angle, 24 High Output Power Package material and color: Clear, peach tinted plastic
Description
The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package.
Package Dimensions
0.116 (2.95) REFERENCE SURFACE 0.052 (1.32) 0.032 (0.082) 0.193 (4.90)
0.030 (0.76) NOM 0.800 (20.3) MIN
0.050 (1.27)
CATHODE 0.100 (2.54) NOM
Schematic
ANODE
0.155 (3.94)
CATHODE
0.018 (0.46) SQ. (2X)
Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.10 (.25) on all non-nominal dimensions unless otherwise specified.
(c)2005 Fairchild Semiconductor Corporation
1
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QEC112, QEC113 Rev. 1.0.0
QEC112, QEC113 Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Parameter
Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Power Dissipation(1)
Symbol
TOPR TSTG TSOL-I TSOL-F IF VR PD
Rating
-40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 50 5 100
Units
C C C C mA V mW
1. 2. 3. 4.
Derate power dissipation linearly 1.33 mW/C above 25C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics (TA = 25C)
Parameter
Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity QEC112 Radiant Intensity QEC113 Rise Time Fall Time
Test Conditions
IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA
Symbol
PE 21/2 VF IR IE IE tr tf
Min
- - - - 6 14 - -
Typ
940 24 - - - - 1000 1000
Max
- - 1.5 10 30 - - -
Units
nm Deg. V A mW/sr mW/sr ns ns
2 QEC112, QEC113 Rev. 1.0.0
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QEC112, QEC113 Plastic Infrared Light Emitting Diode
Typical Performance Curves
Fig. 1 Normalized Radiant Intensity vs. Forward Current
Ie - NORMALIZED RADIANT INTENSITY
10 Normalized to: IF = 100 mA Pulsed tpw = 100 s Duty Cycle = 0.1 % TA = 25C
Fig. 2 Coupling Characteristics of QEC11X And QSC11X
IC (ON) - NORMALIZED COLLECTOR CURRENT (mA)
1.0 Normalized to: d=0 IF Pulsed tpw = 100 s Duty Cycle = 0.1 % VCC = 5 V RL = 100 TA = 25C
0.8
1
0.6
0.1
0.4
0.01
0.2 IF = 20 mA 0.0 0 1
IF = 100 mA
0.001 1 10 100 1000
2
3
4
5
6
7
8
IF - FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
Fig. 3 Forward Voltage vs. Ambient Temperature
2.0 IF = 50 mA
0.8 1.0 0.9
Fig. 4 Normalized Intensity vs. Wavelength
VF - FORWARD VOLTAGE (V)
1.5 IF = 100 mA
NORMALIZED INTENSITY
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 875
1.0 IF = 20 mA
IF = 10 mA
0.5
Normalized to: IF Pulsed tpw = 100 s Duty Cycle = 0.1 % -20 0 20 40 60 80 100
0.0 -40
900
925
950
975
1000
1025
TA - AMBIENT TEMPERATURE (C)
(nm)
Fig. 5 Radiation Diagram
110 120 130 140 150 160 170 180 1.0 100 90 80 70 60 50 40 30 20 10 0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
3 QEC112, QEC113 Rev. 1.0.0
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QEC112, QEC113 Plastic Infrared Light Emitting Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I16
4 QEC112, QEC113 Rev. 1.0.0
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