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IHP10T120
Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
* * Short circuit withstand time - 10s Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Very low Vce(sat) Very soft, fast recovery anti-parallel EmConTM HE diode Low EMI Application specific optimisation of inverse diode VCE 1200V IC 10A VCE(sat),Tj=25C 1.7V Tj,max 150C Marking H10T120
*
C
G
E
P-TO-220-3-1 (TO-220AB)
* * *
Type IHP10T120
Package TO-220-3-1
Ordering Code Q67040-S4650
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax, Tc = 25C Diode surge non repetitive current, tp limited by Tjmax TC = 25C, tp = 10ms, sine halfwave TC = 25C, tp 2.5s, sine halfwave TC = 100C, tp 2.5s, sine halfwave Gate-emitter voltage Short circuit withstand time
1)
Symbol VCE IC
Value 1200 16 10
Unit V A
ICpuls IF
24 24
11 7 IFpuls IFSM 28 50 40 VGE tSC Ptot Tj Tstg 20 10 138 -40...+150 -55...+150 260 V s W C 16.5 A
VGE = 15V, VCC 1200V, Tj 150C Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case IGBT thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 5mA VCE(sat) V G E = 15V, I C = 10A T j = 25 C T j = 12 5 C T j = 15 0 C Diode forward voltage VF V G E = 0V, I F = 4A T j = 25 C T j = 15 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 6mA, V C E = V G E V C E = 1200V, V G E = 0V T j = 25 C T j = 15 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V ,V G E = 2 0V V C E = 20V, I C = 10A 10 none 0.2 2.0 100 nA S 5.0 1.65 1.7 5.8 2.15 6.5 mA 1.7 2.0 2.2 2.2 1200 V Symbol Conditions Value min. typ. max. Unit RthJA 62 RthJCD 2.6 RthJC 0.9 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
2
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 10s V C C = 600V, T j = 25 C 48 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 10A V G E = 1 5V 13 nH 606 48 29 53 nC pF
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 25 C, V R = 8 00V, I F = 4A, di F / dt = 75 0A / s 115 330 7.15 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 6 10V, I C = 10A, V G E = 0/ 15V, R G = 8 1 , L 2 ) = 180nH, 2) C =39pF Energy losses include "tail" and diode reverse recovery. 45 20 520 82 0.68 0.78 1.46 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current trr Qrr Irrm T j = 15 0 C V R = 8 00V, I F = 4A, di F / dt = 75 0A / s 185 630 8.1 ns nC A td(on) tr td(off) tf Eon Eoff Ets T j = 15 0 C, V C C = 6 10V, I C = 10A, V G E = 0 / 15V, R G = 81 L 1 ) = 180nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 45 24 592 177 0.83 1.19 2.02 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2 Jun-04
Power Semiconductors
IHP10T120
Soft Switching Series
tp=2s
20A
10A
10s
IC, COLLECTOR CURRENT
15A
T C =80C
IC, COLLECTOR CURRENT
50s 1A 200s 500s 2ms 0,1A DC
10A
T C =110C
Ic
5A
Ic
0A 100Hz 1kH z 10kHz 100kHz
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
140W 120W
25A
20A
IC, COLLECTOR CURRENT
50C 75C 100C 125C
Ptot, DISSIPATED POWER
100W 80W 60W 40W 20W 0W 25C
15A
10A
5A
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
20A
20A
IC, COLLECTOR CURRENT
15V 15A 13V 11V 10A 9V 7V 5A
IC, COLLECTOR CURRENT
VGE=17V
VGE=17V 15V 15A 13V 11V 10A 9V 7V 5A
0A 0V 1V 2V 3V 4V 5V 6V
0A 0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
20A
3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C
IC=15A
IC, COLLECTOR CURRENT
15A
IC=8A IC=5A IC=2.5A
10A
5A TJ=150C 25C 0A 0V 2V 4V 6V 8V 10V 12V
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
td(off)
td(off) tf
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
tf
100 ns
td(on) 10ns tr
td(on) 10 ns tr
1ns
5A
10A
15A
1 ns
5
50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns tf td(on) tr
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
7
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
*) Eon and Etsinclude losses due to diode recovery
Ets*
3,2 mJ
*) Eon and Ets include losses due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
6,0mJ
2,8 mJ 2,4 mJ 2,0 mJ 1,6 mJ 1,2 mJ 0,8 mJ 0,4 mJ Eoff Eon*
4,0mJ Eon* 2,0mJ Eoff
0,0mJ
5A
10A
15A
0,0 mJ
5
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E)
*) Eon and E ts include losses due to diode recovery 2,5mJ
E ts*
*) Eon and Ets include losses due to diode recovery 3mJ
E, SWITCHING ENERGY LOSSES
2,0mJ
E, SWITCHING ENERGY LOSSES
1,5mJ
E off E on*
2mJ Ets* 1mJ Eoff Eon*
1,0mJ
0,5mJ
0,0mJ 50C 100C 150C
0mJ 400V
500V
600V
700V
800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
1nF
Ciss
VGE, GATE-EMITTER VOLTAGE
15V
240V 10V
960V
c, CAPACITANCE
100pF
Coss Crss
5V
0V
0nC
25nC
50nC
10pF 0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=8 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V
75A
10s
50A
5s
25A
tSC,
0s
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
9
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
0
10 K/W D=0.5
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W 0.2 0.1
R,(K/W) 0.500 0.578 1.036 0.4046
R1
0
0.2 0.1 10 K/W
-1
R,(K/W) 0.1759 0.3291 0.2886 0.1189
, (s) -2 8.688*10 -2 1.708*10 -3 1.259*10 -4 1.898*10
R2
10 K/W
-1
0.05 0.02 0.01 single pulse
0.05 0.02 0.01 10 K/W 10s
-2
R1
, (s) -2 4.529*10 -3 6.595*10 -3 1.003*10 -5 9.423*10
R2
C1= 1/R1
C2= 2/R2
C1= 1/R1
C2= 2/R2
single pulse 100s 1ms 10ms 100ms
10 K/W 10s
-2
100s
1ms
10ms
100ms
1
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance as a function of pulse width (D = tp / T)
tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)
850nC
500ns 450ns I F =8A 4A
800nC I F =8A
trr, REVERSE RECOVERY TIME
400ns 350ns 300ns 250ns 200ns 150ns 100ns 50ns 0A/s
Qrr, REVERSE RECOVERY CHARGE
750nC 700nC 650nC 600nC 550nC 500nC 450nC 400nC 0A/s 2A 4A
2A
400A/s
800A/s
1200A/
400A/s
800A/s
1200A/
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=800V, TJ = 125C, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
20 I F =8A
12
REVERSE RECOVERY CURRENT
10 I F =8A 4A 2A
15
S, SOFTNESSFACTOR
4A
8
10
2A
6
5
Irr,
4 0A/s
400A/s
800A/s
1200A/
0 0A/s
400A/s
800A/s
1200A
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=800V, TJ = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical reverse recovery softness factor as a function of diode current slope (VR=800V, TJ = 125C, Dynamic test circuit in Figure E)
2,4V I F =8A
12A 10A
T J =25C 150C
2,0V 4A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1,6V
8A 6A 4A 2A 0A 0V 1V 2V 3V
2A
1,2V
0,8V
0,4V
0,0V
-50C
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
11
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
dimensions symbol
TO-220AB
[mm] min max 10.30 15.95 0.86 3.89 3.00 6.80 14.00 4.75 0.65 1.32 min
[inch] max 0.4055 0.6280 0.0339 0.1531 0.1181 0.2677 0.5512 0.1870 0.0256 0.0520
A B C D E F G H K L M N P T
9.70 14.88 0.65 3.55 2.60 6.00 13.00 4.35 0.38 0.95
0.3819 0.5858 0.0256 0.1398 0.1024 0.2362 0.5118 0.1713 0.0150 0.0374
2.54 typ. 4.30 1.17 2.30 4.50 1.40 2.72
0.1 typ. 0.1693 0.0461 0.0906 0.1772 0.0551 0.1071
Power Semiconductors
12
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH and Stray capacity C =39pF.
Power Semiconductors
13
Rev. 2 Jun-04
IHP10T120
Soft Switching Series
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2 Jun-04

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