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| IGW60T120 ^ TrenchStop Series Low Loss IGBT in Trench and Fieldstop technology * * * * * * * * Best in class TO247 Short circuit withstand time - 10s Designed for : G E - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 60A VCE(sat),Tj=25C 1.9V Tj,max 150C Package TO-247AC C P-TO-247-3-1 (TO-247AC) Type IGW60T120 Ordering Code Q67040-S4521 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 90C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C 1) Symbol VCE IC Value 1200 100 60 Unit V A ICpul s VGE tSC Ptot 150 150 20 10 375 V s W VGE = 15V, VCC 1200V, Tj 150C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Jul-02 Power Semiconductors IGW60T120 ^ TrenchStop Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 3 .0m A VCE(sat) V G E = 15 V , I C = 60 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 2. 0m A, V C E = V G E V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 60 A 30 4 0.6 6.0 600 nA S 5.0 1.9 2.1 2.3 5.8 2.4 6.5 mA 1200 V Symbol Conditions Value min. typ. max. Unit RthJA TO-247AC 40 RthJC 0.33 K/W Symbol Conditions Max. Value Unit Power Semiconductors 2 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) Ciss Coss Crss QGate LE IC(SC) V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =6 0 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C = 6 0 0 V, T j = 25 C - 3700 180 150 280 300 13 - pF nC nH A Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 6 0 A, V G E = 0/ 15 V , R G = 10 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 44 480 80 4.3 5.2 9.5 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 60 0 V, I C = 6 0 A, V G E = 0/ 15 V , R G = 1 0 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 45 600 130 6.4 9.4 15.8 mJ ns Symbol Conditions Value min. typ. max. Unit 1) 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L an d Stray capacity C due to dynamic test circuit in Figure E. 3 Preliminary / Rev. 1 Jul-02 Power Semiconductors IGW60T120 ^ TrenchStop Series 150A 100A TC=80C TC=110C tp=3s 10s 125A IC, COLLECTOR CURRENT 100A IC, COLLECTOR CURRENT 10A 50s 150s 75A 50A Ic Ic 1A 500s 25A 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz 0,1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 10) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V) 350W 80A 250W 200W 150W 100W 50W 0W 25C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 300W 60A 40A 20A 50C 75C 100C 125C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors 4 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series 125A 125A IC, COLLECTOR CURRENT 100A 15V 13V IC, COLLECTOR CURRENT VGE=17V VGE=17V 100A 15V 13V 75A 11V 9V 50A 7V 75A 11V 9V 50A 7V 25A 25A 0A 0V 1V 2V 3V 4V 5V 6V 0A 0V 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 125A 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C IC=100A IC, COLLECTOR CURRENT 100A IC=60A 75A IC=30A 50A IC=15A 25A TJ=150C 25C 0V 2V 4V 6V 8V 10V 12V 0A 0C 50C 100C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series td(off) 1000 ns tf td(off) t, SWITCHING TIMES 100ns td(on) tr 10ns t, SWITCHING TIMES tf 100 ns td(on) tr 10 ns 1ns 20A 40A 60A 80A 1 ns 5 15 25 35 45 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=10, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=60A, Dynamic test circuit in Figure E) td(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ. t, SWITCHING TIMES 100ns t f td(on) tr 10ns 0C 50C 100C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=60A, RG=10, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 2.0mA) Power Semiconductors 6 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series 30,0mJ *) Eon and Etsinclude losses due to diode recovery Ets* *) Eon and Ets include losses due to diode recovery Ets* E, SWITCHING ENERGY LOSSES 25,0mJ E, SWITCHING ENERGY LOSSES 20 mJ 20,0mJ 15,0mJ Eoff 15 mJ 10,0mJ 10 mJ Eoff 5,0mJ Eon* Eon* 0,0mJ 20A 40A 60A 80A 5 mJ 5 15 25 35 IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=10, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=60A, Dynamic test circuit in Figure E) 16mJ *) E on and E ts include losses due to diode recovery E ts * 25mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES 14mJ 12mJ 10mJ 8mJ 6mJ 4mJ E off E, SWITCHING ENERGY LOSSES 20mJ 15mJ Ets* 10mJ E on* Eoff 5mJ Eon* 50C 100C 150C 400V 500V 600V 700V 800V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=60A, RG=10, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=60A, RG=10, Dynamic test circuit in Figure E) Power Semiconductors 7 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series Ciss VGE, GATE-EMITTER VOLTAGE 15V 1nF 240V 10V 960V c, CAPACITANCE Coss 100pF Crss 5V 0V 0nC 100nC 200nC 300nC 10pF 0V 10V 20V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=60 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME 15s IC(sc), short circuit COLLECTOR CURRENT 12V 14V 400A 10s 300A 200A 5s 100A 0s 0A 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C) VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C) Power Semiconductors 8 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series VCE, COLLECTOR-EMITTER VOLTAGE VCE IC, COLLECTOR CURRENT 600V 90A 90A 600V 400V 60A 60A IC 400V 200V 30A 30A 200V 0V IC 0us 0.5us 1us 1.5us VCE 0A 0A 0us 0V 0.5us 1us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=10, Tj = 150C, Dynamic test circuit in Figure E) t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=10, Tj = 150C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 10 K/W -1 0.2 0.1 0.05 R,(K/W) 0.2003 0.0776 0.0469 0.0053 10 K/W -2 0.02 0.01 , (s)= 7.98*10-2 3.86*10-3 4.44*10-4 4.87*10-5 R2 single pulse 1 R C 1 = 1 /R 1 C 2 = 2 /R 2 10 K/W 10s -3 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series TO-247AC symbol dimensions [mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 6.12 [inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 A B C D E F G H K L M N P 0.76 max 0.0299 max 3.61 0.1421 Q Power Semiconductors 10 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF. Power Semiconductors 11 Preliminary / Rev. 1 Jul-02 IGW60T120 ^ TrenchStop Series Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Preliminary / Rev. 1 Jul-02 |
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