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MD1822 J0000F UN2110 BC141 CP50241 640N06L HIROSE CMY210
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  Datasheet File OCR Text:
 Silicon PIN Diode
q q
BXY 42BA-3
Fast switching In stripline package other lead configurations available
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BXY 42BA-3 Marking - Ordering Code Q62702-X143 Pin Configuration Cathode: black dot, heat sink Package1) T1
Maximum Ratings Parameter Reverse voltage Peak forward current, tp =1 s Total power dissipation Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient Rth JA
Symbol VR IFRM Ptot Tj Tstg Top
Values 50 5 350 175 - 55 ... + 150 - 55 ... + 150
Unit V A mW C
450
K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
BXY 42BA-3
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 10 A Reverse current VR = 40 V Storage time IF = 10 mA, VR = 10 V Diode capacitance VR = 20 V, f = 1 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Forward resistance f = 100 MHz, IF = 10 mA Symbol min. V(BR) IR ts CT
L
Values typ. - - 4 - 40 1.5 max. - 5 - 0.24 - - 50 - - - - -
Unit V nA ns pF ns
rf
Semiconductor Group
2


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