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| NPN Silicon RF Transistor q q BFQ 29P For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFQ 29P Marking KC Ordering Code (tape and reel) Q62702-F659 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS 65 C 3) Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 3) Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj TA Tstg Values 15 20 3 30 4 280 150 - 65 ... + 150 - 65 ... + 150 Unit V mA mW C 385 305 K/W For detailed dimensions see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. 1) 2) BFQ 29P Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 20 V, IE = 0 Emitter-base cutoff current VEB = 3 V, IC = 0 DC current gain IC = 3 mA, VCE = 6 V IC = 10 mA, VCE = 6 V Collector-emitter saturation voltage IC = 20 mA, IB = 1 mA V(BR)CE0 ICB0 - - IEB0 hFE 50 50 VCEsat - - 140 0.1 250 - 0.4 V - - - - 0.05 10 100 A Values typ. max. Unit 15 - - V A - BFQ 29P Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency IC = 3 mA, VCE = 6 V, f = 200 MHz IC = 20 mA, VCE = 6 V, f = 200 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Input capacitance VEB = 0.5 V, IC = ic = 0, f = 1 MHz Output capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Noise figure IC = 3 mA, VCE = 6 V, f = 10 MHz, ZS = 75 IC = 4 mA, VCE = 6 V, f = 800 MHz, ZS = 50 Power gain IC = 20 mA, VCE = 6 V, f = 800 MHz, Z0 = 50 , ZL = ZLopt Transducer gain IC = 20 mA, VCE = 6 V, f = 1 GHz, Z0 = 50 Linear output voltage two-tone intermodulation test IC = 20 mA, VCE = 6 V, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 20 mA, VCE = 6 V, f = 800 MHz fT - 3.6 Ccb Cce Cibo Cobs F - - Gpe - 0.9 1.5 14 1.2 - - - - - - 2.7 5 0.5 0.28 1.35 0.8 - - 0.65 - - - dB pF GHz Values typ. max. Unit I S21e I 2 - 11 180 - - mV Vo1 = Vo2 - IP3 - 28 - dBm BFQ 29P Total power dissipation Ptot = f (TA*; TS) *Package mounted on alumina Transition frequency fT = f (IC) VCE = 6 V, f = 200 MHz Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1 MHz BFQ 29P Common Emitter Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50) dB IC = 3 mA, VCE = 6 V, Z0 = 50 0.01 0.85 - (ZS = 130 ) - - 1.2 - IC = 5 mA, VCE = 6 V, Z0 = 50 0.01 0.8 0.85 1.25 - 13 (ZS = 100 ) 0.25 93.5 - 11.1 - 0.20 1.1 1.45 - 14 Noise figure F = f (ZS) VCE = 6 V, f = 10 MHz BFQ 29P Circles of constant noise figure F = f (ZS) in ZS-plane, IC = 5 mA, VCE = 6 V, f = 800 MHz Noise figure F = f (IC) VCE = 6 V, f = 800 MHz, ZLopt (G) BFQ 29P Common Emitter S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 2 mA, VCE = 6 V, Z0 = 50 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.93 0.86 0.79 0.66 0.50 0.47 0.45 0.43 0.45 0.46 - 20 - 45 - 62 - 93 - 129 - 147 - 161 179 159 149 6.76 6.42 5.16 4.19 2.99 2.48 2.11 1.78 1.51 1.42 158 144 133 113 92 82 74 63 54 48 0.03 0.06 0.08 0.11 0.11 0.12 0.13 0.14 0.16 0.17 76 65 57 47 41 41 42 47 52 56 0.97 0.89 0.85 0.73 0.62 0.59 0.57 0.55 0.54 0.52 -7 - 17 - 23 - 29 - 33 - 35 - 37 - 40 - 46 - 48 S11, S22 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50 S12, S21 = f (f) IC = 2 mA, VCE = 6 V, Z0 = 50 BFQ 29P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 5 mA, VCE = 6 V, Z0 = 50 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.80 0.69 0.57 0.46 0.35 0.34 0.34 0.34 0.36 0.37 - 31 - 66 - 84 - 118 - 152 - 167 - 180 164 148 139 13.96 11.55 8.56 6.06 4.00 3.25 2.74 2.28 1.94 1.80 147 129 119 102 85 77 71 61 54 49 0.03 0.05 0.06 0.08 0.10 0.12 0.13 0.16 0.19 0.20 72 60 55 53 55 57 58 59 60 60 0.89 0.76 0.68 0.54 0.46 0.45 0.43 0.42 0.41 0.39 - 13 - 28 - 31 - 34 - 33 - 35 - 36 - 39 - 44 - 44 S11, S22 = f (f) IC = 5 mA, VCE = 6 V, Z0 = 50 S12, S21 = f (f) IC = 5 mA, VCE = 6 V, Z0 = 50 BFQ 29P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 10 mA, VCE = 6 V, Z0 = 50 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.65 0.53 0.42 0.35 0.29 0.30 0.30 0.30 0.33 0.35 - 46 - 87 - 104 - 137 - 169 179 169 155 141 133 20.65 14.88 10.41 6.92 4.47 3.59 3.04 2.50 2.11 1.97 135 117 108 94 80 74 69 60 53 49 0.03 0.04 0.05 0.07 0.10 0.12 0.14 0.17 0.20 0.22 69 58 59 61 63 65 64 63 62 62 0.79 0.61 0.54 0.43 0.39 0.38 0.36 0.36 0.35 0.33 - 18 - 32 - 33 - 33 - 30 - 32 - 34 - 36 - 41 - 42 S11, S22 = f (f) IC = 10 mA, VCE = 6 V, Z0 = 50 S12, S21 = f (f) IC = 10 mA, VCE = 6 V, Z0 = 50 BFQ 29P Common Emitter S Parameters (continued) f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG IC = 20 mA, VCE = 6 V, Z0 = 50 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.47 0.40 0.33 0.31 0.28 0.29 0.30 0.30 0.33 0.35 - 64 - 108 - 125 - 154 178 169 161 148 135 128 25.26 16.60 11.22 7.16 4.57 3.65 3.09 2.54 2.15 2.00 126 109 102 89 77 72 67 59 52 48 0.02 0.03 0.04 0.06 0.09 0.12 0.14 0.17 0.21 0.22 67 62 65 68 68 69 68 66 64 63 0.69 0.50 0.46 0.39 0.36 0.36 0.35 0.34 0.34 0.32 - 21 - 32 - 30 - 28 - 26 - 28 - 30 - 33 - 39 - 39 S11, S22 = f (f) IC = 20 mA, VCE = 6 V, Z0 = 50 S12, S21 = f (f) IC = 20 mA, VCE = 6 V, Z0 = 50 |
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