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UTC PZT4033
PNP EPITAXIAL SILICON TRANSISTOR
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC PZT4033 designed for high current general purpose amplifier applications.
1
2
3
4
SOT-223
1:EMITTER 2,4:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified)
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Power dissipation Collector current Junction Temperature Storage Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO PD Ic Tj TSTG RJA
RATING
-80 -80 -5 2 -1 -65 ~ +150 -65 ~ +150 62.5
UNIT
V V V W A C C/W
ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note)
SYMBOL
BVCBO BVCEO BVEBO ICBO IEBO hFE
TEST CONDITIONS
Ic=-10A,IE=0 Ic=-10mA,IB=0 IE=-10A,Ic=0 VCB=-60V,IE=0 VEB=-5V,Ic=0 VCE=-5V,Ic=-0.1mA VCE=-5V,Ic=-100mA VCE=-5V,Ic=-500mA VCE=-5V,Ic=-1A Ic=-150mA,IB=-15mA Ic=-500mA,IB=-50mA
MIN
-80 -80 -5
TYP
MAX
UNIT
V V V nA nA
-50 -10 75 100 70 25 300
Collector-emitter saturation voltage
VCE(sat)
-0.15 -0.5
V
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R207-002,A
UTC PZT4033
PARAMETER
Base-emitter saturation voltage Gain Bandwidth Product Output capacitance Intput capacitance Turn-on Time Switching Time Storage Time Fall Time
PNP EPITAXIAL SILICON TRANSISTOR
SYMBOL
VBE(sat) fT Cob Cib ton tstg tf
TEST CONDITIONS
Ic=-150mA,IB=-15mA Ic=-500mA,IB=-50mA VCE= -10V,Ic= -50mA, f=1MHz VCB=-10V,IE=0, f=1MHz VEB=-0.5V,IC=0, f=1MHz Ic=-500 mA, VCE= -30V, IB1=- IB2=-50mA
MIN
TYP
MAX
-0.9 -1.1
UNIT
V MHz pF pF ns ns ns
100 20 110 100 350 50
TYPICAL PARAMETERS PERFORMANCE
hFE -Typical Pulsed Current Gain 300 250 200 150 100 50 0 0.1 Ta =25 Ta = -40 0.3 1 3 10 30 100 300 1000 Ta =125 Typical Pulsed Current Gain vs Collector Current VCE=5V VCE (sat) -Collector-to-Emitter Saturation Voltage(V) =10 0.6 Ta =25 0.4 Ta =-40 Collector-emitter Saturation Voltage vs Collector Current
0.2 Ta =125
Ic -Collector Current (mA)
10 Base-emitter Saturation Voltage vs Collector Current VBE (ON) Base to-Emitter ON Voltage( ) V =10
100 Ic -Collector Current(mA) Base-emitter ON Voltage vs Collector Current VCE=5V
1000
1.2 VBE (sat) -Base-to-Emitter Voltage( ) V
1.0
1 Ta =-40 0.8 Ta =25 Ta =125
0.8 Ta =-40 0.6 Ta =25
0.6
0.4 Ta =125 0.2 0.1
0.4 10 100 Ic -Collector Current(mA) Collector Cut off Current vs Ambient Temperature VCB=5V 1000
1
10
50
Ic -Collector Current(mA) Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage f =1.0MHz 200
100
500
ICBO -Collector Current (nA)
10 Capacitance (pF) 100 Cibo 50 20 10 25 50 100 125 75 TA-Ambient Temperature () 150 6 -0.1 -1 Cobo -10 -50
1
0.1
Reverse Bias Voltage ( V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R207-002,A
UTC PZT4033
PNP EPITAXIAL SILICON TRANSISTOR
UTC
UNISONIC TECHNOLOGIES CO. LTD
3
QW-R207-002,A
UTC PZT4033
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO. LTD
4
QW-R207-002,A

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