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PTF 10009 85 Watts, 1.0 GHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. * Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability
* * * *
Typical Output Power and Efficiency vs. Input Power
100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Efficiency (%) 80 72 64 56 48 40 32 24 16 8 0
Output Power
Efficiency
1234
1000
5697
44
9
VDS = 28 V IDQ = 600 mA Total f = 960 MHz
Input Power (Watts)
Package 20230
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C)
(1)per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 20 200 270 1.54 -65 to 150 0.65
Unit
Vdc Vdc C Watts W/C C C/W
All published data at TCASE = 25C unless otherwise indicated.
e
1
PTF 10009
Electrical Characteristics
Characteristic (per side) Conditions Symbol
V(BR)DSS IDSS VGS(th) gfs
e
(100% Tested--characteristics, conditions and limits shown per side)
Min
65 -- 3.0 --
Typ
-- -- -- 2.8
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Dynamic Characteristics
Characteristic (per side)
Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz)
Symbol
Ciss Coss Crss
Min
-- -- --
Typ
90 36 1.9
Max
-- -- --
Units
pF pF pF
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 85 W, IDQ = 600 mA, f = 960 MHz-- all phase angles at frequency of test)
Symbol
Gps h Y
Min
12.0 47 --
Typ
13.0 50 --
Max
-- -- 5:1
Units
dB % --
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VDD = 28 V, Pout = 85 W, IDQ = 600 mA)
Z Source
D
Z Load
G G
S
D
Frequency
MHz 860 900 960 1000 R
Z Source W
jX -0.78 -0.05 0.69 1.35 R 1.76 1.80 1.58 1.39
Z Load W
jX -1.50 -0.78 0.36 1.41 2 5.00 4.80 4.24 3.95 Z0 = 50 W
e
Typical Performance
Gain vs. Power Output
20.0 17.5 15.0
PTF 10009
Intermodulation Distortion vs. Output Power
-10
VDS = 28V
-20
IDQ = 600 mA Total f1 = 960.0 MHz f2 = 960.1 MHz
3rd Order
Gain (dB)
IMD (dBc)
-30 -40
12.5 10.0 7.5 5.0 0 20 40 60 80 100
5th
VDS = 28 V IDQ = 600mA Total f = 960 MHz
7th -50
-60 0 20 40 60 80 100
Output Power (Watts)
Output Power (Watts-PEP)
Output Power vs. Drain-Source Voltage
100
Gain vs. Frequency
(as measured in a broadband circuit)
14
Output Power (Watts)
95 90 13
Gain (dB)
85 80 75 70 65 22 24 26 28 30 32 34
12
VDS = 28 V
11
IDQ = 600 mA Total f = 960 MHz
IDQ = 600 mA Total Pout = 85 W
910 920 930 940 950 960
10 900
Drain-Source Voltage (Volts)
Frequency (MHz)
Bias Voltage vs. Temperature
1.03 1.02 Bias Voltage (V) 1.01 1.00
0.43
Voltage normalized to 1.0 V Series show current (A)
0.99 0.98 0.97 0.96 0.95 -20 30 80 Temp. (C)
1.25 2.08 2.9 3.71 4.53
130
3
PTF 10009
Typical Scattering Parameters
(VDS = 28 V, ID = 1.0 A per side)
e
S11 S21 Ang
-153 -160 -163 -164 -165 -165 -164 -164 -163 -163 -163 -163 -164 -164 -165 -166 -167 -168 -170 -171 -173 -174 -176 -177 -178 -179 180 179 179 179 179 179
f (MHz)
40 60 80 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S12 Ang
93 85 80 76 65 58 51 45 41 36 33 30 27 26 22 21 19 16 14 12 14 8 3 6 1 4 -5 -5 -5 -3 5 -8
S22 Ang
3 1 -6 -13 -18 -23 -31 -31 -28 -33 -36 -52 -46 -53 -27 -18 -13 14 -1 30 53 59 56 69 57 65 56 61 52 59 58 62
Mag
0.883 0.878 0.876 0.884 0.904 0.915 0.934 0.947 0.962 0.975 0.974 0.977 0.979 0.985 0.981 0.980 0.975 0.973 0.972 0.969 0.966 0.969 0.969 0.970 0.970 0.970 0.971 0.971 0.973 0.973 0.972 0.965
Mag
33.0 21.8 16.1 12.8 8.21 5.67 4.36 3.41 2.78 2.30 1.90 1.65 1.44 1.28 1.14 1.01 0.924 0.809 0.749 0.656 0.609 0.564 0.526 0.450 0.405 0.383 0.351 0.330 0.308 0.255 0.219 0.210
Mag
0.014 0.013 0.012 0.012 0.011 0.010 0.010 0.010 0.008 0.008 0.006 0.006 0.005 0.004 0.003 0.004 0.003 0.001 0.003 0.003 0.002 0.003 0.004 0.004 0.005 0.005 0.005 0.005 0.005 0.006 0.006 0.006
Mag
0.527 0.533 0.553 0.574 0.638 0.694 0.769 0.792 0.837 0.873 0.874 0.912 0.916 0.925 0.933 0.933 0.936 0.946 0.939 0.946 0.948 0.945 0.949 0.955 0.953 0.952 0.959 0.957 0.963 0.965 0.965 0.957
Ang
-143 -148 -150 -148 -148 -149 -148 -149 -150 -151 -151 -152 -154 -154 -156 -157 -158 -160 -160 -162 -164 -164 -167 -167 -168 -169 -170 -170 -171 -171 -171 -172
4
e
Test Circuit
PTF 10009
Schematic for f = 960 MHz
DUT C1-2, C5-6, C9, C12-13, C17 C3 C4 C7, C10 C8, C11, C14, C18 C15, C16, C19, C20 L1. L2 R1, R2, R4, R5 R3, R6 10009 33 pF, Capacitor ATC 100 B 11 pF, Capacitor ATC 100 B 6.0 pF, Variable Capacitor, JMC 5701 10 mF, +10 V Electrolytic Capacitor 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Electrolytic Capacitor 4 Turn, #20 AWG, .120" I.D. 1.0 K, W Resistor 5.1 K, 1/4 W Resistor 50 W, .030 l
l1, l22
l2, l21 l3, l20 l4, l19 l5, l6 l7, l10 l8, l9 l11, l12 l13, l14 l15, l16 l17, l18
Circuit Board
20 W, .080 l 32 W, .191 l 25 W, .500 l 25 W, .091 l 7 W, .056 l 13.0 W, .017 l 13.0 W, .017 l 7.0 W, .064 l 10.0 W, .029 l 19.0 W, .028 l .031" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Parts Layout (not to scale)
5
PTF 10009
e
Artwork (1 inch
)
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. LF (c) 1997 Ericsson Inc. EUS/KR 1301-PTF 10009 Uen Rev. B 02-16-00
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