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| PSMN002-25P; PSMN002-25B N-channel enhancement mode field-effect transistor Rev. 01 -- 22 October 2001 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PSMN002-25P in SOT78 (TO-220AB) PSMN002-25B in SOT404 (D2-PAK) 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters s OR-ing applications. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT78 and SOT404, simplified outline and symbol Description gate (g) drain (d) source (s) drain (d) g s Simplified outline [1] mb mb Symbol d MBB076 2 1 MBK106 3 MBK116 123 SOT78 (TO-220AB) [1] SOT404 (D2-PAK) It is not possible to make connection to pin 2 of the SOT404 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 C Tmb = 25 C; VGS = 5 V Tmb = 25 C VGS = 10 V; ID = 25 A; Tj = 25 C VGS = 5 V; ID = 25 A; Tj = 25 C Typ - - - - 2.2 2.45 Max 25 75 230 175 2.6 2.9 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C; unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 C tp 50 s; pulsed; duty cycle 25 %; Tj 150 C Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions Tj = 25 to 175 C Tj = 25 to 175 C; RGS = 20 k Min - - - - - - - - -55 -55 - - - Max 25 25 15 20 75 75 400 230 +175 +175 75 400 500 Unit V V V V A A A W C C A A mJ Source-drain diode Avalanche ruggedness IAS non-repetitive avalanche current - 75 A 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 2 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 120 Pder (%) 80 03aa16 120 Ider (%) 100 03af36 80 60 40 40 20 0 0 50 100 150 200 Tmb ( C) o 0 0 30 60 90 120 150 180 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------- x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 ID (A) RDSon = VDS/ ID tp = 10s 100 s 102 1 ms P 03af38 = tp T DC 10 tp T t 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 3 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 7. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Figure 4 vertical in still air; SOT78 package mounted on a printed circuit board; minimum footprint; SOT404 package Value Unit 0.65 60 50 K/W K/W K/W thermal resistance from junction to mounting base thermal resistance from junction to ambient Symbol Parameter 7.1 Transient thermal impedance 1 Zth(j-mb) (K/W) = 0.5 0.2 10-1 0.1 0.05 P 03af37 = tp T 0.02 10-2 single pulse tp T t 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 4 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 8. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 15 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS =10 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 VDD = 15 V; ID = 12 A; VGS = 5 V; RG = 6 ; resistive load VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 ID = 75 A; VDD = 15 V; VGS = 5 V; Figure 13 - - - - - - - - - - - 140 34 60 2380 1650 53 175 355 285 0.85 1.2 - - - - - nC nC nC pF pF pF ns ns ns ns V - 2.2 2.6 m - - 2.45 4.7 2.9 5.2 m m - - - 0.02 - 10 1 500 100 A A nA 1 0.4 - 1.5 - - 2 - 2.3 V V V 25 22 - - - - V V Conditions Min Typ Max Unit 10400 - Source-drain diode 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 5 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 450 ID (A) 400 350 300 03af39 ID 100 (A) 90 VDS > ID x RDSon 80 70 03af41 Tj = 25 C 10 V 15 V 5 V 4 V 3.6 V 3.4 V 3.2 V 60 175 C 50 40 30 250 3V 200 2.8 V 150 100 50 VGS = 2.2 V 0 0 0.5 1 1.5 2 2.5 VDS (V) 0 0 1 2.6 V 20 2.4 V 10 Tj = 25 C 2 VGS (V) 3 Tj = 25 C Tj = 25 C and 175 C; VDS > ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 0.007 RDSon () 0.006 0.005 03af40 2 a 1.6 03af18 2.4 V 2.6 V 2.8 V 3 V 3.2 V Tj = 25 C 3.4 V 1.2 0.004 3.6 V 0.003 0.002 0.001 0 0 100 200 300 400 500 ID (A) VGS = 15 V 4V 5V 10 V 0.8 0.4 0 -60 0 60 120 Tj (C) 180 Tj = 25 C R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 6 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 2.5 VGS(th) (V) 2 max 03af46 10-1 ID (A) 10-2 03aa36 1.5 typ 10-3 min typ max 1 min 10-4 0.5 10-5 0 -60 -20 20 60 100 140 180 Tj (C) 10-6 0 0.5 1 1.5 2 2.5 3 VGS (V) ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature. Fig 10. Sub-threshold drain current as a function of gate-source voltage. 105 C (pF) 104 03af44 Ciss Coss 103 Crss 102 10-1 1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 7 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor IS 100 (A) 90 80 70 60 50 40 30 20 03af43 6 VGS (V) ID = 75 A 5 VDD = 15 V 4 Tj = 25 C 03af45 VGS = 0 V 175 C Tj = 25 C 3 2 1 10 0 0.0 0.5 1.0 VSD (V) 1.5 0 0 50 100 QG (nC) 150 Tj = 25 C and 175 C; VGS = 0 V ID = 75 A; VDD = 15 V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 8 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16 Fig 14. SOT78 (TO-220AB). 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 9 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped) SOT404 A E A1 mounting base D1 D HD 2 Lp 1 3 b c Q e e 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-02-12 Fig 15. SOT404 (D2-PAK) 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 10 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 10. Revision history Table 6: Rev Date 01 20011022 Revision history CPCN Description Product Data; Initial Version 9397 750 08315 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 11 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor 11. Data sheet status Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. 9397 750 08315 Fax: +31 40 27 24825 (c) Koninklijke Philips Electronics N.V. 2001. All rights reserved. Product data Rev. 01 -- 22 October 2001 12 of 13 Philips Semiconductors PSMN002-25 series N-channel enhancement mode field-effect transistor Contents 1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 (c) Koninklijke Philips Electronics N.V. 2001. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 October 2001 Document order number: 9397 750 08315 |
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