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| PIN Photodiodes PNZ3112 PIN Photodiode Unit : mm For optical control systems 1.00.1 5.00.1 2.540.1 4 3 1.80.3 0.80.2 0.60.1 Features High sensitivity and low dark current For one-dimensional light-point position detection Good positional linearity Small plastic package Adoption of visible light cutoff resin 13.51.0 4.00.1 1.00.3 1.00.3 4-0.6 +0.1 -0.2 1.00.1 4-0.50.15 1 10 5 5 0.2 +0.1 -0.05 2 10 5 5 Absolute Maximum Ratings (Ta = 25C) Parameter Reverse voltage (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR PD Topr Tstg Ratings 30 30 -25 to +85 -30 to +100 Unit V mW C 1.3 1.0 1: Anode A1 2: Common cathode 3: Anode A2 4: Common cathode Dimensions of detection area 3.0 2.5 Unit : mm C Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Photo current Peak sensitivity wavelength Response time Capacitance between pins Resistance between electrodes Gradient of position signal *1 I Symbol ID IL P tr, tf*2 Ct RS*3 a*4 VR = 1V Conditions VR = 1V, L = 1000 lx*1 VR = 1V VR = 1V, RL = 1k VR = 1V, f = 1MHz VR = 1V, Va = 0.5V VR = 1V min 16 typ 20 940 10 10 120 0.08 max 2 Unit nA A nm s pF k L = I1 + I2 Note: I1 and I2 are the photoelectric currents of anodes A1 and A2. White tungsten lamp light source (color temperature T = 2856K) *2 GaAs light emitting diode light source ( = 800nm) *3 V is the potential difference between anodes A1 and A2. a *4 a = | (I -I )/(I +I ) | 12 12 Note :Incident light is at the position 100 m from the reference position. The reference position is the position where I1 = I2. 1 PNZ3112 PIN Photodiodes PD -- Ta 40 10 3 VR = 1V Ta = 25C T = 2856K IL -- L 160 140 IL -- Ta VR = 1V L = 1000 lx T = 2856K PD (mW) IL (A) 30 10 2 IL (%) Relative photo current 10 3 10 4 10 5 120 100 80 60 40 20 Power dissipation Photo current 20 10 10 1 0 - 30 0 20 40 60 80 100 10 -1 10 2 0 - 40 - 20 0 20 40 60 80 100 Ambient temperature Ta (C ) Illuminance L (lx) Ambient temperature Ta (C ) ID -- VR 240 Ta = 25C 200 10 10 2 VR = 1V ID -- Ta 100 Spectral sensitivity characteristics VR = 1V Ta = 25C ID (pA) ID (nA) 160 1 S (%) Relative sensitivity 0 20 40 60 80 100 80 60 Dark current Dark current 120 10 -1 40 80 10 -2 40 10 -3 20 0 0 8 16 24 32 10 -4 - 40 - 20 0 600 700 800 900 1000 1100 1200 Reverse voltage VR (V) Ambient temperature Ta (C ) Wavelength (nm) RS -- Ta 320 10 3 Ct -- VR tr , tf -- RL Sig.IN Va Sig. OUT RL 90% 10% RS (k) Ct (pF) tr , tf (s) 240 10 2 50 tr td tf Resistance between electrodes Capacitance between pins 160 10 Rise time, Fall time 80 1 , 10 3 10 2 VR = 1V 10 1 Ta = 25C 10 -1 1 10 10 2 10 3 10 -1 10 -2 0 - 40 - 20 0 20 40 60 80 100 10 -1 10 -1 1 10 10 2 Ambient temperature Ta (C ) Reverse voltage VR (V) External load resistance RL (k) 2 |
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