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| Datasheet File OCR Text: |
| NTE484 Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features: D Designed for 800 MHz Mobile Communications Equipment D 25W Min., with Greater than 5dB Gain at 836MHz D Withstands Infinite VSWR at Rated Operating Conditions D Internal Input matched "Tuned Q" D Common Base Configuration Absolute Maximum Ratings: (TC = +25C unless othrwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Device Dissipation (At +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.3C/W Electrical Characteristic: (TC = +25C unless otherwise specified) Parameter Static Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, Note 1 V(BR)CES IC = 50mA, VBE = 0, Note 1 Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain V(BR)EBO IE = 10mA, IC = 0 ICES hFE VCE = 15V, VBE = 0 VCE = 6V, IC = 1A 16 36 4 - 20 - - - - - - - - 10 - V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont'd): (TC = +25C unless otherwise specified) Parameter Dynamic Output Power Power Gain Impedance PO PG Zs Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, f = 836MHz VCE = 12.5V, PO= 25W, f = 836MHz 25 5 - - - - - 4.9- j5.8 1.4- j3.5 - - - - - 65 W dB pF Symbol Test Conditions Min Typ Max Unit .725 (18.42) .325 (8.28) Max .195 (4.97) Max .130 (3.3) Dia B C .960 (24.38) Max E B .225 (5.72) Max .380 (5.72) Dia Max .285 (7.25) Max .180 (4.57) Max .730 (18.54) .960 (24.38) Max |
Price & Availability of NTE484
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