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| NTE397 Silicon PNP Transistor Power Amplifier & High Speed Switch (Compl to NTE396) Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0, Note 1 Collector Cutoff Current Emitter Cutoff Current ON Characteristics DC Current Gain Small-Signal Characteristics Output Capacitance Input Capacitance Small-Signal Current Gain Real Part of Input Impedance Cobo Cibo hfe Re(hie) VCB = 10V, IE = 0, f = 1MHz VCB = 5V, IC = 0, f = 1MHz IC = 10mA, VCE = 10V, f = 1MHz VCE = 10V, IC = 5mA, f = 1MHz - - 25 - - - - - 15 75 - 300 pF pF hFE IC = 50mA, VCE = 10V 30 - 120 ICBO IEBO VCB = 280V, IE = 0 VEB = 6V, IC = 0 300 - - - - - - 50 20 V A A Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test; Pulse Width 300s, Duty Cycle 2%. CAUTION: The sustaining voltage must not be measured on a curve tracer. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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