NTE340 Silicon NPN Transistor RF Power Output, High Frequency
Features: D High Transition Frequency D Output of 0.6W can be obtained in the VHF Band (f = 175MHz). Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Peak Collector Voltage, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3A Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Collector Cutoff Current DC Current Gain Transition Frequency Collector Output Capacitance High-Frequency Output Overall Efficiency Symbol ICBO hFE fT Cob PO Test Conditions VCB = 20V, IE = 0 VCE = 13.5V, IC = 100mA VCB = 10V, IE = -100mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz VCC = 13.5V, PI = 0.03W, f = 175MHz VCC = 13.5V, PI = 0.03W, f = 175MHz Min - 20 1.5 - 0.6 - Typ - 50 2 4 0.9 60 Max 10 - - 8 - - Unit A - GHz pF W %
.339 (8.62) Max Seating Plane
.512 (13.0) Min
.026 (.66) Dia Max
ECB .100 (2.54)
.200 (5.08) Max
.240 (6.09) Max
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