NTE23 Silicon NPN Transistor Ultra High Frequency Amp
Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Junction Temperatur, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics:
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Maximum Available Power Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Gpe NF Test Conditions VCB = 15V, IE = 0 VEB = 2V, IC = 0 VCE = 10V, IC = 10mA VCE = 10V, IC = 10mA VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 10mA, f = 500MHz VCE = 10V, IC = 3mA, f = 500MHz Min - - 25 1.5 - 13 - Typ - - 80 2.0 0.75 15 3.0 Max 0.1 0.1 200 - 1.1 - 4.0 Unit A A - GHz pF dB dB
.135 (3.45) Min
.210 (5.33) Max Seating Plane
.500 (12.7) Min
.021 (.445) Dia Max
BEC .100 (2.54) .050 (1.27)
.165 (4.2) Max
.105 (2.67) Max .105 (2.67) Max .205 (5.2) Max
|
