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| NTE2334 Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver, hammer driver, relay driver, etc. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Contains 60 10V Avalanche Diode between Collector and Base D High 50mJ Reverse Energy Rating Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VBE = 40V, IE = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 2.5A VCE = 5V, IC = 2.5A Min - - - Typ - - 20 Max 100 3 - - MHz Unit A mA 1000 4000 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Unclamped Inductive Load Energy Turn-On Time Storage Time Fall Time Symbol VBE(sat) Test Conditions IC = 2.5A, IB = 5mA Min - - 50 50 50 - - - Typ 0.9 - 60 60 - 0.6 4.0 1.5 Max 1.5 2.0 70 70 - - - - Unit V V V V mJ s s s VCE(sat) IC = 2.5A, IB = 5mA V(BR)CBO IC = 5mA, IE = 0 Es/b ton tstg tf L = 100mH, RBE = 100 VCC = 20V, IC = 3A, IB1 = -IB2 = 6mA Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = .420 (10.67) Max .110 (2.79) C B .147 (3.75) Dia Max .500 (12.7) Max E .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab |
Price & Availability of NTE2334
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