 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2314 Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304) Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features: D Low Collector-Emitter Saturation Voltage D Wide ASO and Resistant to Breakdowns Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Allowable Collector Dissipation (TC = +25C ), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Ambient Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE fT VCE(sat) Test Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 2V, IC = 1A VCE = 2V, IC = 8A Current Gain-Bandwidth Product Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Turn-On Time Storage Time Fall Time VCE = 5V, IC = 1A IC = 8A, IB = 0.4A Min - - 100 30 - - 60 50 6 - - - Typ - - - - 20 0.26 - - - 0.2 0.5 0.1 Max 0.1 0.1 200 - - 0.5 - - - - - - MHz V V V V s s s Unit mA mA V(BR)CBO IC = 1mA, IE = 0 V(BR)CBO IC = 1mA, RBE = V(BR)EBO IE = 1mA, IC = 0 ton tstg tf 10IB1 = -10IB2 = IC = 2A, PW = 20s .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
Price & Availability of NTE2314
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |