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| NTE2305 (NPN) & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: D High Collector-Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Note 1. Pulse Test: Pulse Width 5ms, Duty Cycle 10%. Electrical Charactertistics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector-Emitter Cutoff Current VCEO(sus) IC = 200mA, IB = 0, Note 2 ICEX ICEO Emitter-Base Cutoff Current Collector-Base Cutoff Current IEBO ICBO VCE = 160V, VEB(off) = 1.5V VCE = 160V, VEB9off) = 1.5V, TC = +150C VCE = 80V, IB = 0 VBE = 7V, IC = 0 VCB = 160V, IE = 0 160 - - - - - - - - - - - - 0.1 5.0 750 1.0 750 V mA mA A mA A Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Charactertistics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics (Note 2) DC Current Gain hFE VCE(sat) VBE(sat) VBE(on) fT Cob VCE = 2V, IC = 8A VCE = 4V, IC = 16A Collector-Emitter Saturation Voltage IC = 8A, IB = 0.8A IC = 16A, IB = 2A Base-Emitter Saturation Voltage Base-Emitter ON Voltage Dynamic Characteristics Current-Gain Bandwidth Product Output Capacitance VCE = 20V, IC = 1A, f = 0.5MHz, Note 3 VCB = 10V, IE = 0, f = 0.1MHz 1.0 - - - - 800 MHz pF IC = 16A, IB = 2A VCE = 4V, IC = 16A 15 8 - - - - 35 15 - - - - - - 2.0 3.5 3.9 3.9 V V V V Symbol Test Conditions Min Typ Max Unit Note 2. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 3. fT = |hFE| S ftest. .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
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