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| GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES * HIGH POWER GAIN: 7 dB TYP at 12 GHz * HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz * LG = 0.8 m, WG = 330 m * LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz * LOW COST PLASTIC PACKAGE 2 NE721S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 0.2 2. 1 J 3 0.65 TYP. 1.9 0.2 1.6 4 DESCRIPTION The NE721S01 is a low cost 0.8 m recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz. NEC's latest high performance/ low cost plastic packaging technology make the NE721S01 suitable for GPS, TVRO, DBS, PRD and other commercial applications. 1. Source 2. Drain 3. Source 4. Gate 0.125 0.05 0.4 MAX 4.0 0.2 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. ORDERING INFORMATION PART NUMBER NE721S01-T1 NE721S01 NE721S01-T1B QTY 1K/Reel Bulk up to 4K 4K/Reel PACKAGE S01 S01 S01 LEAD LENGTH 1.0 mm 1.0 mm 1.0 mm ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOL PN GS P1dB IDSS VP gm IGSO RTH PARAMETERS AND CONDITIONS Phase Noise at VDS = 3 V, ID = 30 mA, f = 12 GHz, 100 KHz offset Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch Off Voltage at VDS = 3 V, ID = 100 A Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leak Current at VGS = -5 V Thermal Resistance UNITS dBc/Hz dB dBm mA V mS A C/W 30 -4.0 20 MIN NE721S01 S01 TYP -110 7.0 15.0 60 -2.0 40 1.0 10 300 100 -0.5 MAX California Eastern Laboratories 1.5 MAX 2.0 0.2 0.5 TYP. 0 0. 2 NE721S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGDO VGSO IDS TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA C C mW RATINGS 5 -6 -6 IDSS 125 -65 to +125 250 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Total Power Dissipation, PT (mW) Drain Current, ID (mA) 400 80 VGS = 0 V 60 300 200 40 VGS = -0.5 V 100 20 VGS = -1.0 V 0 50 100 150 200 250 0 1 2 3 4 5 Ambient Temperature, TA (C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE -80 BASE BAND 1/f NOISE vs. OFFSET FREQUENCY VDS = 3 V, IDS = 30 mA 80 VDS = 3 V Base Band 1/f Noise, dBv/Hz -90 -100 -110 -120 -130 -140 -150 -160 Drain Current, ID (mA) 60 40 20 0 -4.0 -2.0 0 0.1 1 10 100 Gate to Source Voltage, VGS (V) Offset Frequency, kHz NE721S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) VDS = 3 V, ID = 10 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .936 .877 .813 .743 .691 .649 .639 .659 .683 .710 .748 .776 .805 .839 .859 .858 .877 .874 .875 S11 ANG -48.8 -71.9 -95.7 -119.4 -144.7 -174.6 158.2 136.5 115.8 95.8 78.1 64.2 53.9 45.8 36.4 25.5 18.5 13.8 10.1 MAG 2.501 2.387 2.271 2.153 2.063 1.931 1.765 1.609 1.480 1.351 1.215 1.073 .954 .837 .722 .614 .522 .449 .392 S21 ANG 135.8 115.2 95.2 75.6 56.5 36.8 18.4 1.2 -15.7 -32.9 -49.8 -65.3 -79.8 -93.9 -106.6 -118.9 -130.0 -140.1 -148.3 MAG .070 .096 .115 .127 .135 .136 .129 .122 .117 .113 .107 .102 .101 .103 .104 .100 .100 .101 .098 S12 ANG 57.1 41.9 26.4 12.5 -1.1 -14.2 -24.8 -33.4 -39.8 -46.8 -52.8 -54.7 -59.5 -61.9 -67.1 -70.8 -77.8 -82.2 -85.0 MAG .700 .662 .619 .568 .518 .448 .370 .305 .257 .234 .226 .235 .288 .388 .485 .576 .628 .675 .724 S22 ANG -26.5 -40.8 -53.4 -66.2 -77.4 -86.4 -95.5 -111.4 -132.8 -159.5 -173.4 143.9 113.0 89.1 75.7 66.0 55.5 45.9 36.4 VDS = 3 V, IDS = 20 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .925 .858 .786 .715 .662 .625 .622 .647 .675 .703 .742 .776 .806 .833 .859 .855 .876 .871 .866 S11 ANG -51.4 -75.6 -100.2 -124.5 -150.4 179.8 153.4 132.5 112.7 93.2 76.3 62.7 52.7 44.8 35.4 24.7 17.9 12.7 9.2 MAG 2.988 2.819 2.641 2.472 2.335 2.155 1.950 1.773 1.625 1.480 1.332 1.178 1.051 .925 .804 .686 .586 .509 .446 S21 ANG 134.5 113.5 93.4 73.9 55.0 35.8 17.9 1.4 -15.1 -31.8 -48.4 -63.7 -77.6 -91.5 -104.2 -116.6 -127.6 -138.1 -147.2 MAG .064 .087 .102 .112 .118 .117 .111 .109 .106 .107 .105 .105 .108 .108 .112 .109 .108 .108 .102 S12 ANG 56.9 41.3 26.7 13.6 1.7 -10.9 -19.1 -26.1 -30.7 -36.3 -41.6 -45.5 -50.7 -54.8 -59.3 -65.3 -74.0 -77.0 -81.9 MAG .676 .636 .591 .540 .493 .425 .352 .286 .236 .212 .204 .212 .266 .360 .458 .553 .610 .655 .703 S22 ANG -26.8 -40.9 -53.1 -65.4 -75.9 -84.3 -92.9 -107.5 -128.9 -156.0 175.1 143.6 111.8 88.4 75.1 65.9 55.5 46.0 36.8 NE721S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) VDS = 3 V, IDS = 30 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .922 .853 .780 .706 .652 .618 .618 .648 .676 .707 .747 .779 .814 .845 .868 .866 .888 .882 .874 S11 ANG -52.5 -77.0 -102.0 -126.7 -152.7 177.5 151.5 131.0 111.6 92.3 75.5 62.3 52.3 44.3 35.3 24.3 17.6 12.8 8.8 MAG 3.250 3.048 2.842 2.645 2.483 2.283 2.057 1.871 1.713 1.559 1.403 1.241 1.109 .980 .855 .727 .621 .539 .473 S21 ANG 134.0 112.9 92.9 73.4 54.6 35.6 18.1 1.8 -14.5 -31.1 -47.5 -62.7 -76.6 -90.6 -103.2 -115.4 -127.2 -137.3 -146.1 S12 MAG .060 .082 .097 .105 .110 .110 .102 .100 .102 .104 .104 .106 .109 .114 .116 .114 .112 .111 .110 ANG 56.7 41.7 27.8 14.8 2.9 -8.2 -16.3 -20.7 -26.3 -31.1 -35.9 -40.8 -44.5 -49.5 -54.7 -63.3 -67.9 -76.8 -81.7 MAG .672 .632 .586 .538 .488 .426 .354 .288 .239 .214 .204 .209 .260 .356 .457 .547 .610 .656 .706 S22 ANG -26.7 -40.6 -52.6 -64.6 -74.8 -82.8 -90.8 -105.1 -126.2 -153.1 178.3 146.7 113.7 89.5 76.4 66.7 56.1 46.7 37.3 VDS = 3 V, IDS = 40 mA FREQUENCY (GHz) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG .921 .850 .774 .701 .647 .615 .617 .645 .678 .708 .750 .784 .820 .853 .875 .872 .893 .890 .882 S11 ANG -53.1 -78.0 -103.0 -127.9 -153.9 176.2 150.6 130.4 111.1 92.0 75.3 62.3 52.6 44.3 34.9 24.2 17.5 12.4 9.0 MAG 3.386 3.166 2.944 2.732 2.556 2.344 2.116 1.926 1.768 1.612 1.453 1.292 1.157 1.026 .890 .754 .648 .558 .490 S21 ANG 133.7 112.6 92.4 73.2 54.5 35.7 18.3 2.1 -14.1 -30.7 -47.1 -62.2 -76.6 -90.5 -103.7 -116.4 -127.8 -138.2 -147.8 MAG .055 .076 .087 .094 .098 .097 .092 .091 .094 .096 .101 .106 .113 .118 .121 .118 .119 .119 .120 S12 ANG 57.6 41.4 27.8 15.7 5.7 -5.6 -11.4 -14.8 -19.4 -22.1 -27.1 -33.1 -37.0 -43.9 -50.7 -58.0 -65.5 -72.2 -79.8 MAG .690 .650 .606 .560 .517 .457 .393 .332 .282 .254 .238 .231 .269 .361 .462 .556 .619 .665 .715 S22 ANG -25.9 -39.4 -50.9 -62.5 -72.1 -79.7 -87.4 -101.3 -120.5 -144.2 -170.8 159.5 125.6 98.1 81.9 71.2 59.7 49.8 39.8 NE721S01 NE721S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 0.71nH 0.06 ohms CGS_PKG 0.055pF Lsx 0.1nH Rsx 0.06 ohms CDS_PKG 0.06PF Q1 0.58nH Rdx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -1.699 0 2.5 0.0254 0.09 0.09 1.95 1.1 0.8 1e-14 1.2 0 0 6e-12 0.18e-12 5000 1e-10 0.7e-12 0.055e-12 1.2 1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 7 6 4 0 1.36e-10 1.74 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 20 mA to 40 mA Date: 7/97 (1) Series IV Libra TOM Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -9/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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