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| PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 FEATURES * NEW MINIATURE M13 PACKAGE: - Small transistor outline - 1.0 X 0.5 X 0.5 mm - Low profile / 0.50 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 +0.1 0.5 -0.05 +0.1 0.15 -0.05 1 0.35 0.3 2 * * * XX 1 +0.1 1.0 -0.05 3 0.7 0.35 2 +0.1 0.15 -0.05 0.2 3 +0.1 0.2 -0.05 0.1 0.1 0.2 DESCRIPTION The NE688M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.50.05 +0.1 0.125 -0.05 Bottom View PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 7 mA, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz Forward Current Gain at VCE = 1 V, IC = 3 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz A A pF 0.7 UNITS GHz GHz dB dB dB dB 3 80 MIN 4 NE688M13 2SC5616 M13 TYP 5 9.5 1.9 1.7 4 8 145 0.1 0.1 0.8 2.5 MAX Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. California Eastern Laboratories NE688M13 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9 6 2 100 140 150 -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With device mounted on 1.08 cm2 X 1.2 mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = 25C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 200 A 25 200 VCE = 1 V D.C. CURRENT GAIN vs. COLLECTOR CURRENT Collector Current, IC (mA) 180 A 160 A 20 140 A 120 A 15 DC Current Gain, hFE 7 100 A 80 A 60 A 100 10 5 40 A IB = 20 A 0 0 2.5 5 0 0.1 0.2 0.5 1 2 5 10 20 50 100 Collector to Emmiter Voltage, VCE (V) Collector Current, IC (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 50 VCE = 1 V Collector Current, IC (mA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.5 1 Base to Emmiter Voltage, VBE (V) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 2/09/2000 |
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