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MWI 15-12 A7 IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 IC25 = 30 A = 1200 V VCES VCE(sat) typ. = 2.0 V Preliminary Data 1 2 5 6 9 10 16 15 14 3 4 17 7 8 11 12 IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 82 W; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 82 W; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 30 20 ICM = 35 VCEK VCES 10 140 V V A A A s W Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate q q q q q q q q q q q Advantages q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.8 200 100 75 500 70 2.3 1.8 1000 70 2.6 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.88 K/W space savings reduced protection circuits package designed for wave soldering Typical Applications q q VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 15 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V q AC motor control AC servo and robot drives power supplies Inductive load, TVJ = 125C VCE = 600 V; IC = 15 A VGE = 15 V; RG = 82 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-4 021 MWI 15-12 A7 Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 25 17 A A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Conditions IF = 15 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 15 A; diF/dt = -400 A/s; TVJ = 125C VR = 600 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 2.4 1.7 16 130 2.7 V V A ns 2.1 K/W IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.37 V; R0 = 62 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.327 V; R0 = 30 m Thermal Response Conditions Maximum Ratings -40...+150 -40...+125 C C V~ Nm IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.685 K/W Cth2 = 1.162 J/K; Rth2 = 0.195 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions 2500 2.7 - 3.3 Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g Creepage distance on surface Strike distance in air with heatsink compound 6 6 Dimensions in mm (1 mm = 0.0394") Higher magnification see outlines.pdf (c) 2000 IXYS All rights reserved 2-4 MWI 15-12 A7 50 A 40 VGE = 17V 15V 13V 11V 50 A 40 30 11V VGE = 17V 15V 13V IC IC 30 20 10 0 0 1 2 3 4 VCE 20 10 0 9V TVJ = 125C 9V TVJ = 25C 5 6V7 0 1 2 3 4 5 VCE 6V7 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 50 A 40 IC 50 40 A 30 TVJ = 125C TVJ = 25C IF 30 20 TVJ = 125C TVJ = 25C 20 10 VCE = 20V 10 0 4 6 8 10 12 VGE 0 14 V 16 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 40 trr 20 V 200 160 ns 120 15 VGE IRM A 30 trr 10 20 80 5 VCE = 600V IC = 15A 10 IRM TVJ = 125C VR = 600V IF = 15A MWI1512A7 40 0 0 0 20 40 60 QG 0 80 nC 100 0 200 400 600 800 A/ms -di/dt 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 MWI 15-12 A7 6 mJ Eon 120 ns td(on) 80 t Eoff 6 mJ td(off) 600 ns 400 t Eoff 4 4 VCE = 600V VGE = 15V RG = 82W TVJ = 125C tr 2 Eon VCE = 600V VGE = 15V RG = 82W TVJ = 125C 40 2 200 tf 0 0 10 20 IC 0 0 0 10 20 IC 30 A 0 30 A Fig. 7 Typ. turn on energy and switching times versus collector current 3 mJ Eon 150 ns 100 tr VCE = 600V VGE = 15V IC = 15A TVJ = 125C Fig. 8 Typ. turn off energy and switching times versus collector current 2.0 mJ Eoff td(off) 800 ns 600 t Eon td(on) 2 t Eoff 1.5 1.0 50 VCE = 600V VGE = 15V IC = 15A TVJ = 125C 400 1 0.5 200 tf 0 0 20 40 60 80 100 RG 120 W 0 140 0.0 0 20 40 60 80 100 RG 120 W 140 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 40 A ICM 10 K/W ZthJC 1 Fig.10 Typ. turn off energy and switching times versus gate resistor diode 30 IGBT 0.1 20 0.01 10 RG = 82 W TVJ = 125C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MWI1512A7 0 0 200 400 600 800 1000 1200 1400 V VCE 0.01 0.1 t 1 s 10 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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