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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0100
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 1.3 GHz * High Gain: 18.5 dB Typical at 0.5 GHz * Unconditionally Stable (k>1)
The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use".
Chip Outline[1]
Description
The MSA-0100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
Typical Biasing Configuration
R bias VCC > 7 V
Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information.
RFC (Optional) C block IN
MSA
C block OUT Vd = 5 V
5965-9689E
6-242
MSA-0100 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 40 mA 200 mW +20 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 45C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 22.2 mW/C for TMS > 191 C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions[2]: Id = 17 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.1 to 0.7 GHz
Units
dB dB GHz
Min.
Typ.
19.0 0.6 1.3 1.3:1 1.3:1
Max.
dB dBm dBm psec V mV/C 4.5
5.5 1.5 14.0 150 5.0 -9.0 5.5
Notes: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number MSA-0100-GP4 Devices Per Tray 100
6-243
MSA-0100 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 17 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang
0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
.08 .07 .07 .06 .06 .05 .04 .04 .08 .12 .15 .19 .25 .27 .28 .28
171 161 152 143 133 115 84 3 -39 -76 -102 -122 -137 -147 -157 -171
19.0 18.9 18.8 18.6 18.5 18.2 17.7 17.1 15.5 13.7 12.2 10.8 9.4 8.2 7.0 6.0
8.91 8.82 8.72 8.56 8.37 8.15 7.68 7.17 5.95 4.86 4.09 3.47 2.96 2.56 2.24 2.00
174 169 163 156 151 146 136 126 106 90 82 71 60 51 42 35
-22.7 -22.5 -22.3 -22.4 -22.1 -21.9 -21.3 -20.3 -19.3 -17.9 -16.9 -16.4 -15.6 -15.2 -14.8 -14.4
.073 .075 .077 .076 .079 .080 .086 .096 .109 .127 .142 .151 .165 .173 .182 .190
2 6 9 12 14 19 22 26 32 32 36 36 34 32 29 28
.10 .11 .10 .11 .11 .12 .12 .12 .10 .08 .06 .06 .07 .10 .13 .16
-11 -24 -35 -44 -53 -60 -75 -88 -107 -128 -130 -125 -107 -86 -80 -77
Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.
MSA-0100 Typical Performance, TA = 25C
(unless otherwise noted)
21 18 Gain Flat to DC 15 20 25 0.1 GHz 0.5 GHz 1.0 GHz
G p (dB)
20 18 16 8 NF 8 6 4 P1 dB GP
2.0 GHz 10
6 4
9 6
P1 dB (dBm)
2 0 -2 -55
5 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 10 15 20 I d (mA) 25 30
-25
+25
+85
+125
TEMPERATURE (C)
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 17 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f = 0.5 GHz, Id = 17 mA.
6 I d = 20 mA 4
7.0
6.5
I d = 13 mA I d = 17 mA I d = 20 mA
P1 dB (dBm)
I d = 17 mA
NF (dB)
2
6.0
0
I d = 13 mA 5.5
-2
-4 0.1
5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-244
NF (dB)
12
G p (dB)
Gp (dB)
15
MSA-0100 Chip Dimensions
NOT APPLICABLE
INPUT
394 m 15.5 mil
GROUND
OPTIONAL OUTPUT[1]
394 m 15.5 mil Chip thickness is 114 m/4.5 mil. Bond Pads are 41 m/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.
6-245

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