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| MS1649 RF & MICROWAVE TRANSISTORS UHF CLASS C MOBILE APPLICATIONS Features * * * * 470 MHz POUT = 3W GP = 9.5dB MINIMUM COMMON EMITTER CONFIGURATION 1. Collector 2. Base 3. Emitter DESCRIPTION: The MS1649 is a 12.5V epitaxial NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. TO-39 ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCBO VCEO VEBO IC PTOT T STG TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Storage Temperature Junction Temperature Value 36 16 3.5 1.0 7.8 -65 to +200 +200 Unit V V V A W C C Thermal Data RTH(J-C) Thermal Resistance Junction-Case 35.0 C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 MS1649 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC Symbol BVCES BVCEO BVEBO ICES HFE IC = 50mA IC = 50mA IE = 1mA VCB = 12.5V VCE = 5.0V Test Conditions Min. VBE = 0 IB = 0 IC = 0 VBE = 0 IC =100mA 36 16 3.5 --20 Value Typ. ----------- Max. ------1.0 150 Unit V V V mA --- DYNAMIC Symbol GPE f = 470MHz f = 470MHz f = 1.0MHz Test Conditions Min. POUT = 3.0W POUT = 3.0W VCB = 12.5 V VCC = 12.5V VCC = 12.5V 9.5 50 --- Value Typ. ------- Max. ----12 Unit dB % pf COB IMPEDANCE DATA FREQ 175 MHz 470 MHz ZIN() 3.5 + j1.2 3.3 + j3.2 ZCL() 14.0 + j10.0 11.0 + j5.7 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 MS1649 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Rev A: 09/16/05 |
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