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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSL51/D Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPSL51 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -100 -100 -4.0 -600 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 1 2 3 CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = -1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -10 mAdc, IC = 0) Collector Cutoff Current (VCB = -50 Vdc, IE = 0) Emitter Cutoff Current (VEB = -3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -100 -100 -4.0 -- -- -- -- -- -1.0 -100 Vdc Vdc Vdc Adc nAdc Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 MPSL51 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain(1) (IC = -50 mAdc, VCE = -5.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE VCE(sat) -- -- VBE(sat) -- -- -1.2 -1.2 -0.25 -0.30 Vdc 40 250 -- Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -10 Vdc, f = 20 MHz) Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Cobo hfe 60 -- 20 -- 8.0 -- MHz pF -- 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPSL51 200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 - 55C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = - 1.0 V VCE = - 5.0 V 25C Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 75C 10-1 10-2 10-3 0.3 REVERSE 25C FORWARD VCE = 30 V IC = ICES 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut-Off Region Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MPSL51 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = - 55C to 135C Figure 4. "On" Voltages Figure 5. Temperature Coefficients 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout C, CAPACITANCE (pF) VBB + 8.8 V VCC -30 V 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo TJ = 25C Cobo Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 10 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn-On Time Figure 9. Turn-Off Time 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MPSL51 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MPSL51 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 MPSL51/D Motorola Small-Signal Transistors, FETs and Diodes Device Data *MPSL51/D* |
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