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| UTC MPSA194 PNP EPITAXIAL PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The MPSA194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. FEATURES *Collector-Emitter Voltage: VCEO=400V *Power Dissipation: 1.0W 1 TO-92 APPLICATIONS *Telephone circuit *Telecommunication circuit 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Tj TSTG RATING 400 400 6 1.0 800 150 -55 ~ +150 UNIT V V V W mA C C ELECTRICAL CHARACTERISTICS(Tj=25C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO ICBO ICEO IEBO hFE TEST CONDITIONS Ic=100A,IE=0 Ic=1mA,IB=0 VCB=400V,IE=0 VCB=200V,VBE=0 VEB=6V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=20mA VCE=10V,Ic=80mA Ic=20mA,IB=2mA Ic=80mA,IB=4mA Ic=20mA,IB=2mA VCE=20V,IE=10mA, f=1MHz VCB=20V,IE=0, f=1MHz MIN 400 400 TYP MAX UNIT V V A A A 10 1 0.2 50 50 40 800 0.2 1.2 0.9 10 30 Collector-emitter saturation voltage Base-emitter saturation voltage Current Gain Bandwidth Porduct Output capacitance VCE(sat) VBE(sat) fT Cob V V MHz pF UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-026,A |
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