View MMPQ2907A_1281735.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FFB2907A / FMB2907A / MMPQ2907A
FFB2907A
E2 B2 C1
FMB2907A
C2 E1 C1
MMPQ2907A
E2 B2 E3 B3 E4 B4
E1
B1
SC70-6
Mark: .2F
pin #1
C2 B1 E1
pin #1 B1
B2 E2
SOIC-16
Mark: MMPQ2907A
pin #1 C1
NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.
SuperSOT-6
Mark: .2F
Dot denotes pin #1
C2 C1
C3 C2
C4 C4 C3
PNP Multi-Chip General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25C unless otherwise noted
Parameter
Value
60 60 5.0 600 -55 to +150
Units
V V V mA C
4
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2907A 300 2.4 415
Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240
Units
mW mW/C C/W C/W C/W
1998 Fairchild Semiconductor Corporation
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Collector Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 30 V, VEB = 0.5 V VCE = 30 V, VBE = 0.5 V VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 125C 60 60 5.0 50 50 0.02 20 V V V nA nA A A
ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50
300 0.4 1.6 1.3 2.6 V V V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 250 6.0 12 MHz pF pF
SWITCHING CHARACTERISTICS
ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 6.0 V, IC = 150 mA IB1 = IB2 = 15 mA VCC = 30 V, IC = 150 mA, IB1 = 15 mA 30 8.0 20 80 60 20 ns ns ns ns ns ns
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V
Collector-Emitter Saturation Voltage vs Collector Current
0.5 = 10 0.4 0.3 0.2 0.1 0
125 C - 40 C
400 300 200 100 0 0.1
125 C
25 C
25 C
- 40 C
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
1
10 100 I C - COLLECTOR CURRE NT (mA)
500
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
- 40 C
Base Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 0.1
- 40 C
0.8 0.6 0.4 0.2 0
25 C
25 C
125 C
= 10
125 C
4
VCE = 5V
1
10 100 I C - COLLECTOR CURRENT (mA)
500
1 10 I C - COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current vs Ambient Temperature
I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10
Input and Output Capacitance vs Reverse Bias Voltage
20 CAPACITANCE (pF) 16 12
C ib
1
8 4 0 0.1
C ob
0.1
0.01 25
50 75 100 T A - AMBIE NT TEMP ERATURE ( C)
125
1 10 REVERSE BIAS VOLTAGE (V)
50
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times vs Collector Current
250 I B1 = I B2 = 200
V cc = 15 V Ic 10
Turn On and Turn Off Times vs Collector Current
500 I B1 = I B2 = 400
V cc = 15 V Ic 10
TIME (nS)
TIME (nS)
150 100
tr tf
ts
300 200
t off
50
td
100 0 10
t on
0 10
100 I C - COLLECTOR CURRENT (mA)
1000
100 I C - COLLECTOR CURRENT (mA)
1000
Rise Time vs Collector and Turn On Base Currents
I B1 - TURN 0N BASE CURRENT (mA) 50 PD - POWE R DIS SIPATION (W) 1
Power Dissipation vs Ambient Temperature
SOIC-16
0.75
20 10 5
30 ns t r = 15 V
SOT-6
0.5
SC70 -6
0.25
2
60 ns
1 10
100 I C - COLLECTOR CURRENT (mA)
500
0
0
25
50 75 100 TE MPE RATURE (C)
125
150
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
CHAR. RELATIVE TO VALUES AT I C= -10mA
CHAR. RELATIVE TO VALUES AT VCE = -10V
Common Emitter Characteristics
5 h oe 2 1 0.5 h ie h re h fe
Common Emitter Characteristics
1.3 h re h ie h fe hoe
1.2
h re and hoe
1.1
1 h ie 0.9 h fe 0.8 -4 I C = -10mA T A = 25oC -20
0.2 0.1 _
VCE = -10 V T A = 25 oC 1
_ _ _ _ 2 5 10 20 I C - COLLECTOR CURRENT (mA) _
50
-8 -12 -16 V CE - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT TA = 25oC
Common Emitter Characteristics
1.5 I C = -10mA 1.4 V = -10 V CE 1.3 1.2 1.1 hoe 1 0.9 0.8 0.7 0.6 0.5 -40 h fe -20 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 h re h ie h fe h ie h re hoe
4
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Test Circuits
- 30 V
200
1.0 K 0 - 16 V 200ns 50
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
1.5 V
- 6.0 V
1 K
37
1.0 K 0 - 30 V 200ns 50
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM
PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G

▲Up To Search▲

Price & Availability of MMPQ2907A

	To Download MMPQ2907A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .