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MMDT4413
COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features
* * * * * Complementary Pair One 4401-Type NPN, One 4403-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package
SOT-363
A
C2 B1 E1
NEW PRODUCT
Dim A B
BC
C1
Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25
KXX
E2 B2
C D F H J
M
0.65 Nominal
Mechanical Data
* * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K13 Weight: 0.006 grams (approx.)
K
H
K L M
J
D
F
L
All Dimensions in mm Note: E1, B1, and C1 = PNP 4403 Section, E2, B2, and C2 = NPN 4401 Section. Type marking indicates orientation. @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value 60 40 6.0 600 200 625 -55 to +150 Unit V V V mA mW K/W C
Maximum Ratings, NPN 4401 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Maximum Ratings, PNP 4403 Section
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG Value -40 -40 -5.0 -600 200 625 -55 to +150 Unit V V V mA mW K/W C
Notes:
1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation.
DS30121 Rev. 3P-1
1 of 4
MMDT4413
NEW PRODUCT
Electrical Characteristics, NPN 4401 Section
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol
@ TA = 25C unless otherwise specified Min 60 40 6.0 3/4 3/4 20 40 80 100 40 3/4 0.75 3/4 3/4 3/4 1.0 0.1 40 1.0 250 Max 3/4 3/4 3/4 100 100 3/4 3/4 3/4 300 3/4 0.40 0.75 0.95 1.2 6.5 30 15 8.0 500 30 3/4 Unit V V V nA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 100mA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100A, VCE = IC = 1.0mA, VCE = IC = 10mA, VCE = IC = 150mA, VCE = IC = 500mA, VCE = 1.0V 1.0V 1.0V 1.0V 2.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 10V, IC = 20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA
Notes:
3. Pulse test: Pulse width 300ms, duty cycle 2%.
DS30121 Rev. 3P-1
2 of 4
MMDT4413
NEW PRODUCT
Electrical Characteristics, PNP 4403 Section
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Symbol
@ TA = 25C unless otherwise specified Min -40 -40 -5.0 3/4 3/4 30 60 100 100 20 3/4 -0.75 3/4 3/4 3/4 1.5 0.1 60 1.0 200 Max 3/4 3/4 3/4 -100 -100 3/4 3/4 3/4 300 3/4 -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100A, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V
DC Current Gain
hFE
3/4
Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
V V
IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0
Ccb Ceb hie hre hfe hoe fT
pF pF kW x 10-4 3/4 mS MHz
VCE = -10V, IC = -1.0mA, f = 1.0kHz
VCE = -10V, IC = -20mA, f = 100MHz
td tr ts tf
3/4 3/4 3/4 3/4
15 20 225 30
ns ns ns ns
VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA
Notes:
3. Pulse test: Pulse width 300ms, duty cycle 2%.
DS30121 Rev. 3P-1
3 of 4
MMDT4413
30
VCE COLLECTOR-EMITTER VOLTAGE (V)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100
IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA
20 10
Cibo
CAPACITANCE (pF)
5.0
Cobo
1.0
0.1
1.0
10
50
REVERSE VOLTS (V) Fig. 1 (4401) Capacitances (Typical)
IB BASE CURRENT (mA) Fig. 2 (4401) Typical Collector Saturation Region
VCE COLLECTOR-EMITTER VOLTAGE (V)
30 20
Cibo
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA
CAPACITANCE (pF)
10
5.0
Cobo
1.0 -0.1
-1.0
-10
-30
0.001
0.01
0.1
1
10
100
REVERSE VOLTS (V) Fig. 3 (4403) Capacitances (Typical)
IB BASE CURRENT (mA) Fig. 4 (4403) Typical Collector Saturation Region
DS30121 Rev. 3P-1
4 of 4
MMDT4413

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