View MMDT39041_1281643.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SPICE MODEL: MMDT3904
MMDT3904
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2)
A
C2 B1 E1
SOT-363 Dim
BC
Min 0.10 1.15 2.00 0.30 1.80 -- 0.90 0.25 0.10 0
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8
A B C D F
M
Mechanical Data
* * * * * * * * Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate)
K
E2
B2
C1
G H
0.65 Nominal
H J K L M
J
D
F
L
C2
B1
E1
*
E2
B2
C1
All Dimensions in mm
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes: 1. 2.
Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG
Value 60 40 6.0 200 200 625 -55 to +150
Unit V V V mA mW C/W C
Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout documents APO2001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead.
DS30088 Rev. 11 - 2
1 of 4 www.diodes.com
MMDT3904
(c) Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3)
@TA = 25C unless otherwise specified Symbol Min Max 50 50 300 0.20 0.30 0.85 0.95 4.0 8.0 10 8.0 400 40 5.0 Unit Test Condition
V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL
60 40 5.0
V V V nA nA
IC = 10A, IE = 0 IC = 1.0mA, IB = 0
B
IE = 10A, IC = 0 VCE = 30V, VEB(OFF) = 3.0V VCE = 30V, VEB(OFF) = 3.0V
DC Current Gain
hFE
40 70 100 60 30 0.65 1.0 0.5 100 1.0 300
IC = 100A, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
B B
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
Notes: 3. Short duration pulse test used to minimize self-heating.
VCE(SAT) VBE(SAT)
V V
IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA
B B
Cobo Cibo hie hre hfe hoe fT NF
pF pF k x 10 S MHz dB
-4
VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1.0mA, f = 1.0kHz
VCE = 20V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 100A, RS = 1.0k, f = 1.0kHz VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA
td tr ts tf

35 35 200 50
ns ns ns ns
DS30088 Rev. 11 - 2
2 of 4 www.diodes.com
MMDT3904
(c) Diodes Incorporated
200
15 CIBO, INPUT CAPACITANCE (pF) COBO, OUTPUT CAPACITANCE (pF)
Note 1
f = 1MHz
PD, POWER DISSIPATION (mW)
150
10
100
5
Cibo
50
Cobo
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature (Total Device)
0 0.1
1
10
100
VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage
1000
1
IC IB = 10
TA = 125C
100
TA = -25C
T A = +25C
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
VCE = 1.0V
hFE, DC CURRENT GAIN
0.1
10
1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, Typical DC Current Gain vs Collector Current
0.01 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (mA) Fig. 4, Typical Collector-Emitter Saturation Voltage vs. Collector Current
10
IC IB = 10
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
0.1 0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA) Fig. 5, Typical Base-Emitter Saturation Voltage vs. Collector Current
DS30088 Rev. 11 - 2
3 of 4 www.diodes.com
MMDT3904
(c) Diodes Incorporated
Ordering Information
Device MMDT3904-7-F
Notes: 4.
(Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K6N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Data Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L 2001 M Mar 3 2002 N Apr 4 2003 P May 5 2004 R Jun 6 2005 S 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30088 Rev. 11 - 2
4 of 4 www.diodes.com
MMDT3904
(c) Diodes Incorporated

▲Up To Search▲

Price & Availability of MMDT39041

	To Download MMDT39041 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .