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| T-1 PACKAGE NPN PHOTOTRANSISTOR Description The MID-33H22 is a NPN silicon phototransistor mounted in a lensed, special dark plastic package. The lensing effect of the package allows an acceptance half view angle of 15 that is measured from the optical axis to the half sensitivity point . 1.00 (.040) 5.25 (.207) MID-33H22 Package Dimensions Unit: mm ( inches r3.00 (.118) 4.00 (.157) 0.800.50 (.032.020) FLAT DENOTES COLLECTOR 23.40MIN. (.920) Features l l l l l 0.50 TYP (.020) 1.00MIN (.040) 2.54 (.100) Wide range of collector current Lensed for high sensitivity Low cost plastic package compatible IRED : 850 nm or above Acceptance view angle : 30o E C Notes : 1. Tolerance is 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 0.8 mm (.031") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings @ TA=25oC Parameter Power Dissipation Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 100 30 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW V V Unity Opto Technology Co., Ltd. 02/04/2002 MID-33H22 Optical-Electrical Characteristics @ TA=25oC Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current Iceo-Collector Dark Current -A Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA, =850nm Ee=0.1mW/cm2 VCC =5V, RL=1K IC=1mA VCE=10V Ee=0 VCE=5V, =850nm Ee=0.1mW/cm2 Symbol V(BR)CEO V(BR)ECO VCE(SAT) Tr Tf ICEO IC(ON) IC Normalized Collector Current Min. 30 5 Typ . Max. Unit V V 0.4 15 15 100 2 V S nA mA Typical Optical-Electrical Characteristic Curves 1000 100 10 1 0.1 0.01 0.001 TA- Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 160 120 80 40 0 0 2 4 6 8 10 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 0 40 80 120 Relative Collector Current (mA) TA - Ambient Temperature - oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 2 4.0 3.5 Vce = 5 V 2 3.0 Ee = 0.1 mW/cm 2.5 @= 850 nm 2.0 1.5 1.0 0.5 0.0 -75 -25 25 75 125 Tr Tf Rise and Fall Time - S Vce = 5 V RL - Load Resistance - K FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE Relative Sensitivity Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 30 40 50 60 70 80 90 0 10 20 1.0 0.9 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.5 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002 |
Price & Availability of MID-33H22
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