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| MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. O U T L IN E D R A W IN G U nit:m illim e te rs (inc he s ) 24 + /- 0 .3 FEATURES Internally matched to 50 ohm system High output power P1dB = 32W (TYP.) @ f=5.9 - 6.4 GHz High power gain GLP =9.0 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency P.A.E. = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=34.5dBm S.C.L. 2 M IN (1 ) R 1 .2 0.6 + /- 0 .1 5 1 7 .4 + /- 0 .2 8 .0 + /- 0 .2 (2 ) 2 M IN (3 ) 20 .4 + /- 0 .2 APPLICATION 5.9 - 6.4 GHz band power amplifier 4 .3 + /- 0 .4 0 .1 + /- 0 .0 5 16 .7 QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS = 10 (V) ID = 8 (A) Rg=25 (ohm) 1 .4 G F -38 Refer to Bias Procedure (1) GATE (2) SOURCE(FIANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature Ratings -15 -15 25 -80 168 150 175 -65 / +175 Unit V V A mA mA W deg.C deg.C < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. *1 : Tc=25 Deg.C ABSOLUTE MAXIMUM RATINGS Symbol IDSS Gm VGS(off) P1dB GLP PAE IM3 Parameter Saturated drain current Transconductance Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Power added efficiency 3rd order IM distortion *1 *2 Delta Vf method Test conditions Min VDS = 3V , VGS = 0V VDS = 3V , ID = 8A VDS = 3V , ID = 160mA -2 44 VDS=10V, ID(RF off)=8A, f=5.9-6.4GHz 8 -42 Limits Typ 24 8 45 9 33 -45 0.8 Max -5 1.0 A S V dBm dB % dBc Deg.C/W Unit Rth(ch-c) Thermal resistance *1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz *2 : Channel-case MITSUBISHI ELECTRIC 2 .4 + /- 0 .2 June/2004 MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25 Deg.C) Po , PAE vs. Pin P1dB ,GLP vs. f OUTPUT POWER P1dB (dBm) 47 46 45 44 43 42 41 VDS=10(V) IDS=8(A) 14 P1dB 50 VDS=10(V) IDS=8(A) f=6.15(GHz) Po 50 13 12 11 10 9 8 5.8 5.9 6.0 6.1 6.2 6.3 6.4 6.5 LINEAR POWER GAIN GLP(dB) OUTPUT POWER Po(dBm) 45 40 40 30 GLP 35 PAE 20 30 10 25 20 25 30 35 40 45 0 FERQUENCY (GHz) INPUTPOWER Pin(dBm) Po IM3 vs. Pin 44 OUTPUT POWER Po (dBm S.C.L.) VDS=10(V) IDS=8(A) f=6.4(GHz) Delta f=10(MHz) 0 Po 42 40 38 36 34 32 30 28 26 24 22 20 -10 -20 -30 -40 IM3 -50 -60 18 20 22 24 26 28 30 32 34 36 INPUT POWER Pin(dBm S.C.L.) S PARAMETERS f (GHz) 5.90 6.00 6.10 6.20 6.30 6.40 (Ta=25 Deg.C , VDS=10V , IDS=8A) S Parameters (TYP.) S21 Magn. Angle(deg.) 2.957 3.071 3.119 3.148 3.143 3.122 -44 -62 -81 -100 -118 -137 S12 Magn. Angle(deg.) 0.04 0.05 0.06 0.07 0.08 0.09 -117 -134 -152 -167 175 160 S22 Magn. Angle(deg.) 0.21 0.22 0.25 0.26 0.26 0.25 160 134 112 91 73 55 S11 Magn. Angle(deg.) 0.61 0.55 0.48 0.41 0.34 0.28 159 138 115 92 65 36 MITSUBISHI ELECTRIC IM3(dBc) June/2004 POWER ADDED EFFICIECY PAE (%) MITSUBISHI SEMICONDUCTOR MGFC45V5964A 5.9 - 6.4GHz BAND 32W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004 |
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