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Fast Recovery Epitaxial Diode (FRED) Module
VRSM V 600 VRRM V 600 Type MEA95-06 DA
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MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA
VRRM = 600 V IFAV = 95 A trr = 250 ns
TO-240 AA
2 MEK 95-06 DA
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3
MEE 95-06 DA
1 2 3
1
Symbol IFRMS IFAVyyx IFRM IFSM
Test Conditions Tcase = 75C Tcase = 75C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 142 95 TBD 1200 1300 1080 1170 7200 7100 5800 5700 -40...+150 -40...+125 110 A A A A A A A A2s A2s A2s A2s C C C W V~ V~
q
q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ Tstg THmax Ptot VISOL Md dS dA a Weight Symbol IR Test Conditions TVJ = 25C TVJ = 25C TVJ = 125C IF = 100 A; IF = 300 A; VT0 rT RthJH RthJC trr IRM VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ TVJ TVJ TVJ = 125C = 25C = 125C = 25C Tcase = 25C 50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Mounting torque (M5) Terminal connection torque (M5) Creep distance on surface Strike distance through air Maximum allowable acceleration
Features International standard package with DCB ceramic base plate Planar passivated chips Short recovery time Low switching losses Soft recovery behaviour Isolation voltage 3600 V~ UL registered E 72873
280 3000 3600
2.5-4/22-35 Nm/lb.in. 2.5-4/22-35 Nm/lb.in. 12.7 9.6 50 90 mm mm m/s2 g
Applications Antiparallel diode for high frequency switching devices Free wheeling diode in converters and motor control circuits Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q q q q
q q
q
Characteristic Values (per diode) typ. max. 2 0.5 34 1.36 1.55 2.05 2.09 1.01 2.85 0.550 0.450 TVJ = 100C TVJ = 25C TVJ = 100C 250 300 14 21 mA mA mA V V V V V mW K/W K/W ns A A
q
Advantages High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Dimensions in mm (1 mm = 0.0394")
VF
For power-loss calculations only TVJ = 125C DC current DC current IF = 100 A VR = 300 V -di/dt = 200 A/ms
x IFAV rating includes reverse blocking losses at TVJM, VR = 0.6 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
(c) 2000 IXYS All rights reserved
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749
MEA 95-06 DA MEE 95-06 DA MEK 95-06 DA
200 A 175 IF 150 125 100 75 50 25 0 0.0 0 10 1 10 0 100 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 4 C Qr 3
TVJ= 100C VR = 300V
IRM
60 A TVJ= 100C VR = 300V 50 40
TVJ=150C TVJ=100C TVJ=25C
2
IF=190A IF= 95A IF=47.5A
IF=190A IF= 95A IF=47.5A
30 20
0.5
1.0
1.5 V VF
2.0
Fig. 1 Forward current IF versus voltage drop VF per leg
2.0
Fig. 2 Reverse recovery charge Qr versus -diF/dt
250 ns
Fig. 3 Peak reverse current IRM versus -diF/dt
50 A 40 VFR 1.0
TVJ= 100C VR = 300V
TVJ= 100C IF = 150A tfr
s
VFR
1.5 Kf 1.0
Qr IRM
trr 200
0.8 tfr 0.6
IF=190A IF= 95A IF=47.5A
150
30
20 0.5 100 10
0.4
0.2
0.0 0 50 100 TVJ C 150
50 0 200 400 600 A/ms 1000 800 -diF/dt
0 0 200 400 600 800 diF/dt
0.0 1000 A/ms
Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ
0.6 K/W 0.5 0.4 ZthJH 0.3 0.2 0.1 0.0 0.001
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJH calculation: i 1 2 3 4
0.01 0.1 1s 10 t
Rthi (K/W) 0.037 0.138 0.093 0.282
ti (s) 0.002 0.134 0.25 0.274
Fig. 7 Transient thermal impedance junction to heatsink
(c) 2000 IXYS All rights reserved
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