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| Amplifier, Power, 2 W 2.5-6.0 GHz Features 2.5 Watt Saturated Output Power Level Variable Drain Voltage (4-10V) Operation MSAG (R) Process MAAPGM0066-DIE Rev C Preliminary Datasheet Description The MAAPGM0066-DIE is a 3-stage 2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Point-to-Point Radios Point-to-Multipoint Radios SatCom Broadband Wireless Access Mechanical Sample (Die) MAAP-000066-MCH000 Also Available in: Description Part Number Plastic MAAP-000066-PKG003 Sample Board (Die) MAAP-000066-SMB004 SAMPLES Electrical Characteristics: T B = 30C1, Z0 = 50, VDD = 8V, IDQ = 650mA2, Pin = 6 dBm Parameter Bandwidth Output Power 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Output Third Order Intercept Output Third Order Intermod, Pout = 26 dBm (DCL) Gate Current Drain Current 1. 2. Symbol f POUT P1dB G PAE VSWR VSWR TOI IMD3 IGG IDD Typical 2.5-6.0 33.5 33.3 33.5 35 1.4:1 2.4:1 42 40 10 810 dBm dBc mA mA Units GHz dBm dBm dB % 1 TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.2V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 16.0 +12.0 -3.0 1.04 10.4 170 -55 to +150 MAAPGM0066-DIE Rev C Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 8.0 -2.0 6.0 14.0 Note 5 Max 10.0 -1.2 13.0 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 12 10 Peak Power Dissipation (W) 8 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.0 V). 4. Set RF input. 6 4 2 0 0 20 40 60 80 100 120 140 160 180 MMIC Base Temperature (C) 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 40 38 36 34 Pout PAE 50 45 40 35 40 38 36 34 30 28 26 24 22 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 25 20 15 10 5 0 P1dB (dBm) Pout (dBm) PAE (%) 32 30 32 30 28 26 24 22 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 6V 8V 10V Frequency (GHz) Frequency (GHz) Figure 1. Output Power and Power Added Efficiency at VD = 8V, Pin = 6dBm, and IDSQ=650mA Figure 2. 1dB Compression Point and Drain Voltage at IDSQ=650mA 40 38 36 34 40 38 36 34 Psat (dBm) Psat (dBm) 32 30 28 26 24 22 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 6V 8V 10V 32 30 28 26 24 22 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -25C 30C 87C Frequency (GHz) Frequency (GHz) Figure 3. Saturated Output Power and Drain Voltage at IDSQ=650mA. Figure 4. Saturated Output Power and Temperature at VD =8V and IDSQ=650mA 6 40 39 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 Pout SSG PAE IDS 0.60 0.55 0.50 150 40 36 Output Power (dBm), SSG(dB), PAE (%) 32 28 5 38 37 36 35 34 33 32 31 Gain (dB) 24 20 16 12 8 4 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 Gain Input VSWR Output VSWR 4 3 2 1 30 30 40 50 60 70 80 90 100 110 120 130 140 Frequency (GHz) Junction Temperature (C) Figure 5. Small Signal Gain and Input and Output VSWR at VD = 8V and IDSQ=650mA Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and Drain Current vs. Junction Temperature at 8V, 4 GHz, and IDSQ=650mA 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Drain Current (A) VSWR Amplifier, Power, 2 W 2.5-6.0 GHz 40 38 36 34 32 38 36 34 MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 40 Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 -8 -6 -4 -2 0 2 4 6 8 10 3.5 GHz 4 GHz 4.5 GHz Gain (dB) 28 32 30 28 26 24 22 20 20 22 24 26 28 30 32 34 36 38 40 3.5 GHz 4 GHz 4.5 GHz Input Power (dBm) Figure 7. Output Power vs. Input Power and Frequency at 10V and IDSQ=650mA Output Power (dBm) Figure 8. Gain vs. Output Power and Frequency at VD=10V and IDSQ=650mA. 1.5 50 1.4 45 40 35 3.5 GHz 4 GHz 4.5 GHz 1.3 1.2 Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 3.5 GHz 4 GHz 4.5 GHz PAE (%) 30 25 20 15 10 5 0 -8 -6 -4 -2 0 2 4 6 8 10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Figure 9. Power Added Efficiency vs. Input Power and Frequency at VD=10V and IDSQ=650mA 40 38 38 36 34 32 36 34 Input Power (dBm) Figure 10. Drain Current vs. Input Power and Frequency at VD=10V and I DSQ =650mA 40 Output Power (dBm) 30 26 24 22 20 18 16 14 12 10 -8 -6 -4 -2 0 2 4 6 8 10 3.5 GHz 4 GHz 4.5 GHz Gain (dB) 28 32 30 28 26 24 22 20 20 22 24 26 28 30 32 34 36 38 40 3.5 GHz 4 GHz 4.5 GHz Input Power (dBm) Figure 11. Output Power vs. Input Power and Frequency at VD=8V and I DSQ =650mA Output Power (dBm) Figure 12. Gain vs. Output Power and Frequency at VD=8V and IDSQ=650mA. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz 1.5 50 1.4 45 40 35 3.5 GHz 4 GHz 4.5 GHz 1.3 1.2 MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. Drain Current (A) 3.5 GHz 4 GHz 4.5 GHz PAE (%) 30 25 20 15 10 5 0 -8 -6 -4 -2 0 2 4 6 8 10 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) Figure 13. Power Added Efficiency vs. Input Power and Frequency at VD=8V and IDSQ=650mA Input Power (dBm) Figure 14. Drain Current vs. Input Power and Frequency at VD=8V and IDSQ=650mA 50 48 46 44 3 GHz 4 GHz 5 GHz 100 90 80 70 3 GHz 4 GHz 5 GHz TOI (dBm) 42 40 38 36 34 32 30 10 12 14 16 18 20 22 24 IMD3 (dBc) 60 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Fundamental Output Power, Single Tone (dBm) Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V. Fundamental Output Power per Tone (dBm) Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V. 50 48 46 44 3 GHz 4 GHz 5 GHz 100 90 80 70 3 GHz 4 GHz 5 GHz TOI (dBm) 42 40 38 36 34 32 30 10 12 14 16 18 20 22 24 IMD3 (dBc) 60 50 40 30 20 10 0 10 12 14 16 18 20 22 24 Fundamental Output Power, Single Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V. Fundamental Output Power per Tone (dBm) Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz MAAPGM0066-DIE Rev C Preliminary Datasheet All Data is at 30C MMIC base temperature, CW stimulus, unless otherwise noted. 50 48 46 44 3 GHz 4 GHz 5 GHz 100 90 80 70 3 GHz 4 GHz 5 GHz 40 38 36 34 32 30 10 12 14 16 18 20 22 24 IMD3 (dBc) TOI (dBm) 42 60 50 40 30 20 10 0 10 12 14 16 18 20 22 24 OFundamental Output Power, Single Tone (dBm) Figure 19. Third Order Intercept vs. Output Power and Frequency at 10V. Fundamental Output Power per Tone (dBm) Figure 20. Third Order Intermod vs. Output Power and Frequency at 10V. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz Mechanical Information Chip Size: 3.000 x 3.150 x 0.075 mm (118 MAAPGM0066-DIE Rev C Preliminary Datasheet x 124 x 3 mils) Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 1. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VGG Size (m) 100 x 200 200 x 100 100 x 100 Size (mils) 4x8 8x4 4x4 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 2 W 2.5-6.0 GHz Assembly 100 pF 0.1 F MAAPGM0066-DIE Rev C Preliminary Datasheet VDD RFIN RFOUT VGG 0.1 F 100 pF Figure 2. Recommended operational configuration. Wire bond as shown. Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent 8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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