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Band Switching Diodes
MA2C859
Silicon epitaxial planar type
Unit : mm
For band switching
0.45 max.
* Extra-small DHD envelope, allowing to insert into a 5 mm pitch hole * Less voltage dependence of the terminal capacitance Ct * Low forward dynamic resistance rf * Optimum for a band switching of a tuner
0.2 max.
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature Storage temperature Symbol VR IF Topr Tstg Rating 35 100 -25 to +85 -55 to +100 Unit V mA C C
2
1.75 max.
1 : Cathode 2 : Anode JEDEC : DO-34
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC)*1 Symbol IR VF Ct r f* 2 rf
*3
Conditions VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz
Min
Typ
Max 100 1.0
13 min.
2.2 0.3
1st Band 2nd Band
0.2 max.
13 min.
I Features
COLORED BAND INDICATES CATHODE
1
Unit nA V pF
Forward voltage (DC) Terminal capacitance Forward dynamic resistance
0.8 0.5 0.77
1.2 0.65 0.98
Note) 1 Rated input/output frequency: 100 MHz 2 *1 : Measurement in light shielded condition *2 : rf measuring instrument: Nihon Koshuha MODEL TDC-121A Lead length 5mm *3 : rf measuring instrument: YHP 4191A Lead length 5mm
I Cathode Indication
Type No. Color 1st Band 2nd Band MA2C859 Black Blue
1
MA2C859
IF V F
102 103 Ta = 85C 10
Band Switching Diodes
IR V R
103
IR T a
Forward current IF (mA)
Reverse current IR (pA)
50C
1
Reverse current IR (pA)
102
102
VR = 33 V
20 V
10 25C
10
10-1 Ta = 85C 10-2 50C 25C - 20C
1
1
10-3
0
0.2
0.4
0.6
0.8
1.0
1.2
10-1
0
10
20
30
40
50
10-1 -40
0
40
80
120
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
rf f
10 16 IF = 2 mA Ta = 25C rf Tester: TDC-121A 8 14 12 10 8 6 4 2 0
rf f
3.2
r f If
Forward dynamic resistance rf ()
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 f = 100 MHz Ta = 25C rf Tester: TDC-121A
Forward dynamic resistance rf ()
6
4
2
0
Forward dynamic resistance rf ()
IF = 2 mA Ta = 25C rf Tester: YHP4191A
1
3
10
30
100
1
2
3
5
10
20 30 50
100
1
10
100
Frequency f (MHz)
Frequency f (MHz)
Forward current IF (mA)
rf IF
3.2 2.0 f = 1 000 MHz Ta = 25C rf Tester: YHP4191A
Ct VR
1 000 f = 1 MHz Ta = 25C
If(surge) tW
Forward dynamic resistance rf ()
1.6
Forward surge current IF(surge) (A)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1
Terminal capacitance Ct (pF)
100
1.2
10
0.8
1
0.4
0 0.3 1 3 10 30 100
0
10
20
30
40
50
0.1 0.03
0.1
0.3
1
3
10
30
Forward current IF (mA)
Reverse voltage VR (V)
Pulse width tW (ms)
2

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