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Kingbright Features !MECHANICALLY (R) T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L53F3BT AND SPECTRALLY MATCHED TO THE L51P3C PHOTOTRANSISTOR. !BLUE TRANSPARENT LENS AVAILABLE HIGH Package Dimensions POWER OUTPUT. Description F3 Made with Gallium Arsenide Infrared Emitting diodes. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subjected to change without notice. Selection Guide Par t No . Dic e L en s Ty p e Iv (m W/s r ) @20m A Min. L53F 3B T GaAs Blue Transparent 5 Typ. 20 Iv (m W/s r ) @50m A Min. 8 Typ. 30 V i ew i n g An g l e 21/2 30 Note: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. L53F3BT-V.1#1 Kingbright It em Forward Voltage Reverse Current Junction Capacitance Peak Spectral Wavelength Spectral Bandwidth (R) Electrical / Optical Characteristics at T)=25C P/N F3 F3 F3 F3 F3 Sy m b o l VF IR Co lR Ty p . 1.2 90 9 40 50 Max . 1.5 10 Un it V uA pF nm nm Co n d it io n IF=20mA VR=5V V=0 f=1MHz IF=20mA IF=20mA Absolute Maximum Ratings at T)=25C It em Power Dissipation Forward Current Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature Sy m b o l Pd IF I P Max im u m Rat in g 100 50 1.2 5 -45~ +80 -45~ +80 Un it s mW mA A V C C VR Topr Tstg Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 4mm below package base. L53F3BT-V.1#2 Kingbright L53F3BT (R) L53F3BT-V.1#3 |
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