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SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING
B
KTD1882
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES Complementary to KTB1772.
K D E G
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Pulse Width DC Pulse (Note)
)
SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 40 30 5 3 7 0.6 625 150 -55 150 UNIT V V
M
H
F
F
V A A mW
L
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
10mS, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter-Cut-off Current DC Current Gain * * *
)
TEST CONDITION VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2V, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz 320 , GR:200 400 MIN. 30 100 TYP. 150 160 0.3 1.0 90 45 MAX. 1 1 400 0.5 2.0 V V MHz pF UNIT A A
SYMBOL ICBO IEBO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT Cob
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Note: hFE(2) Classification
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed O:100 200 , Y:160
2000. 12. 8
Revision No : 0
1/2
KTD1882
I C - V CE
2.0 COLLECTOR CURRENT I C (A) 1.6 1.2 0.8 0.4 0 0 4 8 12 DC CURRENT GAIN h FE
I B=10mA I B=9mA I B=8mA IB =7mA I B=6mA I B=5mA I B=4mA I B=3mA I B=2mA I B=1mA
h FE - I C
1K 500 300 100 50 30 10 5 3 1 0 1 3 5 10 30 50 100 300 1K 3K 5K COLLECTOR CURRENT I C (mA)
VCE =2V
16 2
COLLECTOR-EMITTER VOLTAGE V CE (V)
SATURATION VOLTAGE VCE(sat), V BE(sat) (mV)
V CE(sat) ,VBE(sat) - I C
1K 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300
I C /IB =10 VCE (sat) VBE (sat)
CURRENT GAIN BANDWIDTH PRODUCT f T (MHz)
fT - IC
1K 500 300 100 50 30 10 5 3 1 0.01
VCE =5V
1K
3K
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (A)
C ob - V CB
500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 1K 3K COLLECTOR-BASE VOLTAGE V CB (V)
f=1MHz I E =0
P C - Ta
COLLECTOR POWER DISSIPATION PC (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150
175
1K CAPACITANCE C ob (pF)
AMBIENT TEMPERATURE Ta ( C)
2000. 12. 8
Revision No : 0
2/2

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