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| SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A F G K 1 KTC812T EPITAXIAL PLANAR NPN TRANSISTOR E B K 6 Low on Resistance : RON=1 (Typ.), (IB=5mA) 2 5 4 DIM A B C D E D F G H I 3 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) C G SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg 0.8 ) RATING 50 20 25 300 60 0.9 150 -55 150 UNIT V V V mA mA mW J K L J J H I L 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TS6 * Package mounted on a ceramic board (600 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Marking h FE Rank 6 5 4 Lot No. Q1 Q2 Type Name M 1 2 3 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification B: 350 1200 SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob ton ) TEST CONDITION VCB=50V, IE=0 VEB=25V, IC=0 VCE=2V, IC=4mA IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA VCB=10V, IE=0, f=1MHz OUTPUT INPUT 50 4k 3k MIN. 350 - TYP. 0.042 0.61 30 4.8 160 500 130 MAX. 0.1 0.1 1200 0.3 7 - UNIT A A V V MHz pF tstg tf 10V 1s DUTY CYCLE < 2% = VBB =-3V 1k nS VCC =12V 2002. 12. 5 Revision No : 1 1/3 KTC812T (Q 1 , Q 2 COMMON) I C - VCE 50 COLLECTOR CURRENT I C (mA) 40 30 20 I B =20A I C - V CE (REVERSE REGION) COLLECTOR CURRENT I C (mA) 160 COMMON EMITTER Ta=25 C -10 140 120 100 80 60 40 -8 -6 -4 -2 0 COMMON EMITTER Ta=25 C 50 40 30 20 I B=10A 0 10 0 0 2 4 6 8 0 10 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) 5k 3k DC CURRENT GAIN h FE COMMON EMITTER V CE(sat) - I C 500 300 100 50 30 10 5 3 1 0.1 COMMON EMITTER I C /I B =10 1k 500 300 Ta=100 C VCE =6V Ta=25 C Ta=-25 C 100 50 0.3 1 3 10 VCE =2V 30 100 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 300 COMMON EMITTER VCE =2V fT - IE 500 300 COMMON EMITTER VCE =6V Ta=25 C 200 C 100 50 30 100 Ta= 1 00 Ta=25 C Ta=-25 C 10 5 -0.1 -0.3 -1 -3 -10 -30 -100 0 0 0.4 0.8 1.2 1.6 BASE-EMITTER VOLTAGE VBE (V) EMITTER CURRENT I E (mA) 2002. 12. 5 Revision No : 1 2/3 KTC812T C ob - V CB COLLECTOR-EMITTER ON RESISTANCE R ON () COLLECTOR OUTPUT CAPACITANCE C ob (pF) 30 f=1MHz I E =0 Ta=25 C R ON - I B 100 50 30 10 5 3 1 0.5 0.3 0.01 1k 10 5 3 10k IB 1 0.3 0.5 1 3 5 10 30 0.03 0.1 0.3 1 3 10 COLLECTOR-BASE VOLTAGE VCB (V) BASE CURRENT I B (mA) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 12. 5 Revision No : 1 3/3 |
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