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| KSC5402D/KSC5402DT KSC5402D/KSC5402DT High Voltage High Speed Power Switch Application * * * * * Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices; D-PAK or TO-220 B D-PAK Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25C) : D-PAK * : TO-220 Junction Temperature Storage Temperature Value 1000 450 12 2 5 1 2 30 50 150 - 65 ~ 150 Units V V V A A A A W C C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Thermal Characteristics TC=25C unless otherwise noted Symbol Rjc Rja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purpose ; 1/8" from Case for 5 Seconds Rating TO-220 2.5 62.5 270 D-PAK 4.17 * 50 270 C Unit C/W * Mounted on 1" square PCB (FR4 ro G-10 Material) (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCES=1000V, IEB=0 VCE=450V, VB=0 VEB=10V, IC=0 VCE=1V, IC=0.4A VCE=1V, IC=1A VCE(sat) Collector-Emitter Saturation Voltage IC=0.4, IB=0.04A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.04A IC=1A, IB=0.2A Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C VEB=8V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz IC=0.5A, VCE=10V IF=1A IF=0.2A IF=0.4A TC=25C TC=25C TC=125C TC=25C TC=125C 14 8 6 4 TC=25C TC=125C TC=25C TC=125C Min. 1000 450 12 Typ. 1090 525 14 0.03 1.2 0.3 15 0.01 29 17 9 6 0.25 0.4 0.3 0.65 0.78 0.65 0.85 0.75 330 35 11 0.86 0.75 0.6 0.8 0.65 1.3 1.5 1.2 0.6 1.0 0.75 1.2 1.0 0.9 1.1 1.0 500 100 V V V V V V pF pF MHz V V V V V 100 500 100 500 100 A A Max. Units V V V A (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Electrical Characteristics TC=25C unless otherwise noted Symbol tfr Parameter Diode Froward Recvery Time (di/dt=10A/s) Dynamic Saturation Voltage Test Condition IF=0.2A IF=0.4A IF=1A IC=0.4A, IB1=40mA VCC=300V IC=1A, IB1=200mA VCC=300 RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON tOFF Turn On Time Turn Off Time IC=1A, IB1=200mA IB2=150mA VCC=300V RL = 300 IC=0.4A, IB1=40mA IB2=200mA, Vz=300V LC=200H TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C tSTG tF tC tSTG tF tC Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time IC=0.8A, IB1=160mA IB2=160mA, Vz=300V LC=200H TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C IC=1A, IB1=200mA, IB2=500mA, VZ=300V LC=200H TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C 3 110 180 125 185 1.1 1.35 105 75 125 100 150 150 1.2 350 175 0.95 1.4 110 135 1.25 150 ns ns s s s s 175 175 2.75 ns ns ns ns s s ns ns ns ns s s ns ns ns ns @ 1s @ 3s @ 1s @ 3s Min Typ. 540 520 480 7.5 2.5 11.5 1.5 Max. Units ns ns ns V V V V VCE(DSAT) INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC Storage Time Fall Time Cross-over Time 0.56 0.7 60 75 90 90 0.65 (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics 3.0 IC[A], COLLECTOR CURRENT 2.5 hFE, DC CURRENT GAIN 2.0 IB = 1A 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA 100mA VCE = 1V 100 TJ=125 TJ=25 1.5 10 1.0 0.5 IB = 0 0.0 0 1 2 3 4 5 6 1 1E-3 0.01 0.1 1 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE = 6V 100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 5 IB TJ=125 TJ=25 hFE, DC CURRENT GAIN 10 10 1 TJ=125 TJ=25 0.1 1 1E-3 0.01 0.1 1 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC = 5 IB VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB 10 1 TJ=25 TJ=125 1 TJ=125 TJ=25 0.1 0.1 1E-3 0.01 0.1 1 1E-3 0.01 0.1 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage Figure 6. Collector-Emitter Saturation Voltage (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics (Continued) VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10 IB Cib f=1MHz 1 CAPACITANCE [pF] 100 TJ=25 TJ=125 Cob 0.1 1E-3 10 0.01 0.1 1 1 10 100 IC[A], COLLECTOR CURRENT REVERSE VOLTAGE [V] Figure 7. Base-Emitter Saturation Voltage Figure 8. Collector Output Capacitance 2.0 550 TJ=25 1.5 2.0A 1.0 1.5A 1.0A 0.4A IC=0.2A tfr [ns], FORWARD RECOVERY TIME COLLECTOR VOLTAGE [V] 500 0.5 0.0 1E-3 0.01 0.1 1 450 0.0 0.5 1.0 IC[A], COLLECTOR CURRENT IF [A], FORWARD CURRENT Figure 9. Typical Collector Saturation Region Figure 10. Forward Recovery Time 10 IC=5IB1=2IB2 VCC=300V PW=40s 300 VFD [V], VOLTAGE 1 ton [ns], TIME TJ=25 TJ=125 200 TJ=125 100 TJ=25 0.1 0.01 0.1 1 0.4 0.6 0.8 1.0 1.2 1.4 IFD [A], CURRENT Ic [A], COLLECTOR CURRENT Figure 11. Diode Forward Voltage Figure 12. Resistive Switching Time, ton (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics (Continued) 2.0 IC=5IB1=2IB2 VCC=300V PW=40s 850 800 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200H 750 toff [s], TIME tsi [ns], TIME 700 1.5 TJ=125 650 TJ=125 TJ=25 600 1.0 550 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4 TJ=25 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tsi 100 130 90 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200H 120 110 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200H TJ=125 TJ=25 tC [ns], TIME tfi [ns], TIME 80 100 70 TJ=25 TJ=125 90 60 80 70 50 60 0.4 0.4 0.6 0.8 1.0 1.2 1.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tfi Figure 16. Inductive Switching Time, tc 450 30 400 V =300V Z IC=5IB1=5IB2 VCC=15V LC=200H TJ=125 350 tsi [s], TIME tfi [ns], TIME 300 TJ=125 25 250 TJ=25 IC=5IB1=5IB2 VCC=15V VZ=300V LC=200H 200 150 TJ=25 20 100 0.4 0.6 0.8 1.0 1.2 1.4 50 0.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 17. Inductive Switching Time, tsi Figure 18. Inductive Switching Time, tfi (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Typical Characteristics (Continued) 450 IC=5IB1=5IB2 VCC=15V 400 VZ=300V LC=200H 350 1.6 1.4 TJ=125 TJ=125 1.2 tC [ns], TIME tsi [s], TIME 300 250 TJ=25 1.0 200 TJ=25 150 0.8 100 IC=5IB1=2IB2 VCC=15V V =300V 0.6 L Z=200H C 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4 50 0.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tsi 160 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200H 200 180 IC=5IB1=2IB2 VCC=15V VZ=300V LC=200H 140 160 120 tC [ns], TIME tfi [ns], TIME TJ=25 140 TJ=125 100 120 80 TJ=125 100 TJ=25 80 60 60 40 0.4 0.6 0.8 1.0 1.2 1.4 0.4 0.6 0.8 1.0 1.2 1.4 Ic [A], COLLECTOR CURRENT Ic [A], COLLECTOR CURRENT Figure 21. Inductive Switching Time, tfi Figure 22. Inductive Switching Time, tc 10 40 IC[A], COLLECTOR CURRENT 50s 1 PC[W], POWER DISSIPATION 1000 10s 5ms DC 1ms 1s 30 20 0.1 10 0.01 10 100 0 0 25 50 75 100 125 150 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[], CASE TEMPERATURE Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5402D/KSC5402DT Package Dimensions (Continued) D-PAK 6.60 0.20 5.34 0.30 (0.50) (4.34) (0.50) 0.70 0.20 2.30 0.10 0.50 0.10 0.60 0.20 6.10 0.20 2.70 0.20 9.50 0.30 0.91 0.10 0.80 0.20 MAX0.96 2.30TYP [2.300.20] 0.76 0.10 2.30TYP [2.300.20] 0.89 0.10 0.50 0.10 1.02 0.20 2.30 0.20 (0.70) (0.90) (0.10) (3.05) 6.10 0.20 9.50 0.30 2.70 0.20 (2XR0.25) 0.76 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 (1.00) 6.60 0.20 (5.34) (5.04) (1.50) MIN0.55 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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