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IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60AU1
VCES IC25 VCE(sat)
= 600 V = 160 A = 3V
C G
E
E
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 W, non repetitive TC = 25C 50/60 Hz IISOL 1 mA t = 1 min t=1s
Maximum Ratings 600 600 20 30 160 80 320 ICM = 160 @ 0.8 VCES 10 500 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W V~ V~ C C C
miniBLOC, SOT-227 B E153432
G E
E C E = Emitter , G = Gate, C = Collector E = Emitter
Either Emitter terminal can be used as Main or Kelvin Emitter
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 1 15 100 3 V V mA mA ns V
Features l International standard package miniBLOC l Aluminium-nitride isolation - high power dissipation l Isolation voltage 3000 V~ l UL registered E 153432 l Low VCE(sat) - for minimum on-state conduction losses l Fast Recovery Epitaxial Diode - short trr and IRM l Low collector-to-case capacitance (< 60 pF) - reduced RFI l Low package inductance (< 10 nH) - easy to drive and to protect Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages Space savings l Easy to mount with 2 screws l High power density
l
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 8 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
94552E(7/00)
(c) 2000 IXYS All rights reserved
1-4
IXSN80N60AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 46 8500 VCE = 25 V, VGE = 0 V, f = 1 MHz 650 120 335 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 88 158 140 220 300 450 10 140 220 8 520 550 13 600 600 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.25 K/W 0.05 K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
gfs C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = 60 A; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 %
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.8 19 175 35 V A ns ns
IF = 50 A, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 50 A, VGE = 0 V, -diF/dt = 480 A/ms VR = 360 V TJ = 125C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C
50
0.80 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSN80N60AU1
Fig.1 Saturation Characteristics
160 140 120
11V TJ = 25C VGE = 15V 13V
Fig.2 Output Characterstics
400 360 320 280 240 200 160 120 80 40 0 5 0 2 4 6 8
11V
TJ=25OC
VGE = 15V
Ic - Amperes
IC - Amperes
100 80 60 40 20
7V 9V
13V
9V 7V
0
0
1
2
3
4
10 12 14 16 18 20
VCE - Volts
VCE - Volts
10 9 8 7
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
TJ = 25C
1.5 1.4
Fig.4 Temperature Dependence of Output Saturation Voltage
VGE = 15V IC = 160A
VCE(sat) - Normalized
1.3 1.2 1.1 1.0 0.9 0.8
IC = 40A IC = 80A
Vce - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 40A IC = 80A IC = 160A
0.7 -50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
160
VCE = 10V
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
BV / VGE(th) - Normalized
140 120
1.2
BVCES
IC - Amperes
100 80 60 40 20 0
TJ = 25C TJ = 125C TJ = - 40C
1.1 1.0 0.9 0.8 0.7 -50
IC = 3mA
VGE(th) IC = 8mA
4
5
6
7
8
9
10
11
12
13
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSN80N60AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
1000
TJ = 125C
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
24 1000
TJ = 125C
20
IC = 80A
800
RG = 10W
tfi - nanoseconds
Eoff - millijoules
Eoff
600 400 200 0
tfi
600 400 200 0
12 8 4 0 50
12
tfi
6
0
20
40
60
80
0 100 120 140 160
0
10
20
30
40
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15
IC = 80A
Fig.10 Turn-Off Safe Operating Area
1000
12
VCE = 480A
100
IC - Amperes
TJ = 125C
VGE - Volts
9 6 3 0
10 1 0.1 0.01
RG = 22W dV/dt < 6V/ns
0
100
200
300
400
500
0
100
200
300
400
500
600
700
Qg - nCoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
Diode
0.1
IGBT Single Pulse
0.01
0.001 0.0001
0.001
0.01
0.1
1
Time - Seconds
(c) 2000 IXYS All rights reserved
4-4
Eoff - millijoules
Eoff
tfi - nanoseconds
18
800
16

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