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High speed IGBT
IXSH 35N100A IXSM 35N100A
VCES IC25 VCE(sat)
= 1000 V = 70 A = 3.5 V
Short Circuit SOA Capability
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 2.7 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C
Maximum Ratings 1000 1000 20 30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms
TO-247 AD (IXSH)
G
C
E
TO-204 AE (IXSM)
C
W C C C
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25C TJ = 125C 8 250 1 100 3.5 V V mA mA nA V
Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz
q q q q q q
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Applications AC motor speed control Uninterruptible power supplies (UPS) Welding
q q q
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density
q q
IXYS reserves the right to change limits, test conditions, and dimensions.
91545F (12/96)
(c) 2000 IXYS All rights reserved
1-4
IXSH 35N100A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 25 240 4400 VCE = 25 V, VGE = 0 V, f = 1 MHz 325 85 180 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 45 120 80 150 400 700 10 100 200 4.2 400 1300 15 550 2000 31 950 260 60 200 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
IXSM 35N100A
TO-247 AD (IXSH) Outline
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VGE = 15 V, VCE = 10 V
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
0.42 K/W 0.25 K/W
TO-204 AE (IXSM) Outline
Dim. A B C D E F G H J K Q R
Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66
Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSH 35N100A
IXSM 35N100A
Fig.1 Saturation Characteristics
70
TJ = 25C
Fig.2
250
Output Characterstics
VGE =15V
13V 11V
60
TJ = 25C
VGE = 15V
200
IC - Amperes
IC - Amperes
50 40 30 20 10
7V 9V
13V
150 100 50
11V
9V 7V
0
0 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4
1.4
VGE=15V
Temperature Dependence of Output Saturation Voltage
1.3
IC = 70A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8
IC =1 7.5A IC = 35A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 70A IC = 35A IC = 17.5A
0.7 -50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
50
VCE = 10V
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
40
BV / VGE(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
30 20
TJ = 125C
BVCES IC = 3mA
10 0
TJ = 25C TJ = - 40C
4
5
6
7
8
9 10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSH 35N100A
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
2000
TJ = 125C RG = 10W Eoff
IXSM 35N100A
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
25 2000
TJ = 125C IC = 35A
18
tfi - nanoseconds
tfi - nanoseconds
1750
20
1750
Eoff - millijoules
1500
tfi
15
1500
tfi
16
1250
10
1250
15
1000
0
10
20
30
40
50
60
5 70
1000
0
10
20
30
40
14 50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12 9 6 3 0 0 50 100 150 200
IC = 35A VCE = 500V
Fig.10 Turn-Off Safe Operating Area
100
TJ = 125C RG = 2.7W dV/dt < 5V/ns
10
IC - Amperes
VGE - Volts
1
0.1
0.01 0 200 400 600 800 1000
Qg - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthJC - K/W
0.1 D=0.2
D=0.1 D=0.05 D=0.02
0.01 D=0.01
Single Pulse
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
Eoff - millijoules
Eoff
17
4-4

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