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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 300 V 300 V 300 V ID25 RDS(on) 35 A 100 mW 40 A 85 mW 40 A 88 mW trr 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 35N30 40N30 35N30 40N30 35N30 40N30 Maximum Ratings 300 300 20 30 35 40 140 160 35 40 30 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns W C C C C TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) D G = Gate, S = Source, D = Drain, TAB = Drain G Features * * * * International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * * * * * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 4 100 TJ = 25C TJ = 125C 200 1 0.100 0.085 0.088 V V nA mA mA W W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 91523F (07/00) 35N30 FH40N30 FM40N30 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 35N30 IXFM 35N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 22 25 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 745 280 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 RG = 2 W (External) 60 75 45 177 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 28 78 30 90 100 90 200 50 105 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH 40N30 IXFM 40N30 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25, pulse test Dim. Millimeter Min. Max. A B C D E F G H J K L M 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 35N30 40N30 35N30 40N30 35 40 140 160 1.5 200 350 A A A A V ns ns N 1.5 2.49 TO-204 AE (IXFM) Outline IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V TJ = 25C TJ = 125C Dim. A B C D E F G H J K Q R Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 35N30 IXFM 35N30 IXFH 40N30 IXFM 40N30 (c) 2000 IXYS All rights reserved 3-4 IXFH 35N30 IXFM 35N30 Fig.7 Gate Charge Characteristic Curve 10 VDS = 150V IXFH 40N30 IXFM 40N30 Fig.8 Forward Bias Safe Operating Area 10s 100 Limited by RDS(on) 8 ID = 21A IG = 10mA 6 4 2 0 0 25 50 75 100 125 150 175 200 ID - Amperes 100s VGE - Volts 10 1ms 10ms 100ms 1 1 10 100 300 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 5 10 15 20 25 Coss Crss f = 1 MHz VDS = 25V Ciss Fig.10 Source Current vs. Source 80 70 60 Capacitance - pF ID - Amperes 50 40 30 TJ = 25C TJ = 125C 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Vds - Volts VSD - Volts Fig.11 Transient Thermal Impedance 1 Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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