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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK33N50 IXFK35N50 ID25 RDS(on) 500 V 33 A 0.16 W 500 V 35 A 0.15 W trr 250 ns Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C ID = 32 A TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C 33N50 35N50 33N50 35N50 33N50 35N50 Maximum Ratings 500 500 20 30 33 35 132 140 30 35 2.5 45 5 416 -55 ... +150 150 -55 ... +150 V V V V A A A A A A J mJ V/ns W C C C C Nm/lb.in. g TO-264 AA G D S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features * International standard packages * Molding epoxies meet UL 94 V-0 flammability classification * Low RDS (on) HDMOSTM process * Unclamped Inductive Switching (UIS) rated 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 0.9/6 10 * Fast intrinsic rectifier Applications Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 0.102 2 -0.206 200 TJ = 25C TJ = 125C 200 2 0.16 0.15 4 V %/K V %/K nA mA mA W W VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDSS temperature coefficient VDS = VGS, ID = 4 mA VGS(th) temperature coefficient VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 16.5A * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages 33N50 35N50 Pulse test, t 300 ms, duty cycle d 2 % * Easy to mount * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97517D (07/00) (c) 2000 IXYS All rights reserved 1-2 IXFK 33N50 IXFK 35N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 28 5200 5700 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 240 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 42 110 23 227 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 29 110 0.3 0.15 750 310 45 50 140 35 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 TO-264 AA Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 33 132 1.5 A A V Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.75 7 250 ns mC A (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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